Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate
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OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Advanced Materials and Semiconductor Technologies
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References (41)
Show source-provided references
1. GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors10.1021/acsnano.2c12435 ↗
2. Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies10.1088/1361-6641/ab9ea9 ↗
3. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer10.1063/1.4961025 ↗
4. Recessed AlGaN/GaN UV phototransistor10.5573/JSTS.2019.19.2.184 ↗
5. New tunneling features in polar III-nitride resonant tunneling diodes
6. Comparative simulation of GaAs and GaN based double barriers-resonant tunneling diode10.1016/j.procs.2016.05.224 ↗
7. Group-III nitride heteroepitaxial films approaching bulk-class quality10.1038/s41563-023-01573-6 ↗
8. High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD10.1063/1.5074177 ↗
9. High-quality AlN grown on Si(111) substrate by epitaxial lateral overgrowth10.3390/cryst13030454 ↗
10. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111)10.1016/j.apsusc.2019.01.239 ↗
11. HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate10.1016/j.optmat.2021.111130 ↗
12. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates10.1116/1.4933201 ↗
13. Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm10.1364/OME.422215 ↗
14. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films10.1088/0022-3727/47/31/313001 ↗
15. Epitaxial silicon carbide on silicon. Method of coordinated substitution of atoms (A review)10.1134/S1070363222040028 ↗
16. Growing III–V semiconductor heterostructures on SiC/Si substrates10.1134/S1063785019070277 ↗
17. A new method of growing AlN, GaN, and AlGaN bulk crystals using hybrid SiC/Si substrates10.1134/S1063783419120254 ↗
18. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types10.1134/S1063782617030149 ↗
19. Fityk: a general-purpose peak fitting program10.1107/S0021889810030499 ↗
20. The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study10.1186/s11671-016-1478-6 ↗
21. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride AlxGa1−x As:Si/GaAs(100) heterostructures10.1134/S106378261104021X ↗
22. Morkoç · 2008
23. 2001 · 1
24. Effect of barrier thickness on the interface and optical properties of inGaN/GaN multiple quantum wells10.1143/JJAP.40.3085 ↗
25. Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering10.1016/j.spmi.2006.06.010 ↗
26. Rapid approximation to the Voigt/Faddeeva function and its derivatives10.1016/S0022-4073(97)00231-8 ↗
27. Characterization of bio-inspired electro-conductive soy protein films10.3390/polym13030416 ↗
28. Determination of superlattice effect on metal–ceramic nano-structures10.1016/j.rinp.2015.08.005 ↗
29. Strutz · 2015
30. Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices10.1007/s13204-019-01000-w ↗
31. Effect of combination of etching modes on the design, structural and optical properties of the compliant substrates based on porous silicon10.1016/j.optmat.2021.111358 ↗
32. Phonons in short-period GaN/AlN superlattices: group-theoretical analysis, ab initio calculations, and Raman spectra
33. 2D AlN layers sandwiched between graphene and Si substrates
34. Gallium nitride nanowires grown by low pressure chemical vapour deposition on silicon substrate10.1504/IJNT.2014.059826 ↗
35. Structural investigation of silicon carbide with micro-Raman spectroscopy
36. Phonon dispersion and Raman scattering in hexagonal GaN and AlN10.1103/PhysRevB.58.12899 ↗
37. Strain-stress study of AlxGa1−xN/AlN heterostructures on c-plane sapphire and related optical properties10.1038/s41598-019-46628-4 ↗
38. Defect and stress characterization of AlN films by Raman spectroscopy10.1063/1.2404938 ↗
39. Raman analysis of E2 (high) and A1 (LO) phonon to the stress-free GaN grown on sputtered AlN/graphene buffer layer10.3390/app10248814 ↗
40. Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and Raman spectroscopy10.1557/S109257830000497X ↗
41. S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: features of growth and structural, morphological, and optical properties10.1016/j.optmat.2022.112507 ↗