Controlling photoluminescence of silicon quantum dots using pristine-nanostates formation
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OpenAlex topics: Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices · Nanowire Synthesis and Applications
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References (59)
Show source-provided references
1. Silicon electronics and beyond10.1038/479309a ↗
2. Silicon nanocrystals: unfading silicon materials for optoelectronics10.1016/j.mser.2019.06.001 ↗
3. High-efficiency perovskite solar cells10.1021/acs.chemrev.0c00107 ↗
4. Optoelectronic and structural properties of Ge-rich narrow band gap nc-SixGe1-x absorber layer for tandem structure nc-Si solar cells10.1016/j.jpcs.2021.110055 ↗
5. Progress and outlook of Sn–Pb mixed perovskite solar cells10.1186/s40580-023-00371-9 ↗
6. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers10.1063/1.103561 ↗
7. Enhanced explosive sensing based on silole-modified luminescent porous silicon10.1007/s40042-021-00368-9 ↗
8. Impact of the gate fabrication process of light emitting capacitors based on silicon-rich oxide: Low voltage electroluminescence10.1016/j.jlumin.2021.118470 ↗
9. The structural and luminescence properties of porous silicon10.1063/1.366536 ↗
10. Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO210.1063/1.1886274 ↗
11. Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation10.1088/0268-1242/21/12/004 ↗
12. Nanocrystals for silicon-based light-emitting and memory devices10.1088/0022-3727/46/15/153001 ↗
13. Wetting layer and size effects on the nonlinear optical properties of semi oblate and prolate Si0.7Ge0.3/Si quantum dots10.1016/j.cap.2021.02.004 ↗
14. Stoichiometry dependent changes in the optical properties and nanoscale track formation of PECVD grown a-SiNx:H thin films upon 100 MeV Au8+ ion irradiation10.1016/j.cap.2021.01.004 ↗
15. Low-dimensional effects in a three-dimensional system of Si quantum dots modified by high-energy ion irradiation10.1088/0957-4484/20/18/185401 ↗
16. Spectroscopic studies of SiOx films irradiated with high energy electrons10.1088/1742-6596/558/1/012045 ↗
17. Investigation of photoluminescence mechanisms from SiO2/Si:SiO2/SiO2 structures in Weak quantum confined Regime by Deconvolution of photoluminescence spectra10.1166/jnn.2016.10863 ↗
18. Graded-size Si quantum dot ensembles for efficient light-emitting diodes10.1063/1.3658625 ↗
19. Enhanced subband light emission from Si quantum dots/SiO2 multilayers via phosphorus and boron co-doping
20. Heavily Doped Si nanocrystals formed in P-(SiO/SiO2) multilayers: a promising route for Si-based infrared plasmonics10.1021/acsanm.2c05088 ↗
21. Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices10.1016/S0038-1098(96)00774-0 ↗
22. Control of size and distribution of silicon quantum dots in silicon dielectrics for solar cell application: a review10.1016/j.renene.2018.06.078 ↗
23. Size-Dependent and enhanced photovoltaic performance of solar cells based on Si quantum dots10.3390/en13184845 ↗
24. SiOx nanowires with intrinsic nC-Si quantum dots: the enhancement of the optical absorption and photoluminescence10.1039/c3tc31196a ↗
25. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure10.1016/j.tsf.2014.12.035 ↗
26. Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum10.1016/S0042-207X(02)00266-X ↗
27. Silicon nanocluster aggregation in SiO2:Si layers10.1002/pssa.200925201 ↗
28. Confined phase separation in SiOX nanometric thin layers10.1063/1.4830375 ↗
29. Phase transformation in SiOx/SiO2 multilayers for optoelectronics and microelectronics applications10.1016/j.ultramic.2012.10.013 ↗
30. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer10.1007/s11051-013-1538-0 ↗
31. Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix10.1063/5.0001840 ↗
32. Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition
33. Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films10.1088/0957-4484/20/48/485703 ↗
34. Photoluminescence of silicon nanocrystals in silicon oxide10.1155/2007/43491 ↗
35. Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition10.1063/1.4904053 ↗
36. Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: importance of parasitic oxidation for third generation photovoltaic applications10.1063/1.4766284 ↗
37. SRIM – the stopping and range of ions in matter10.1016/j.nimb.2010.02.091 ↗
38. Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO 2 superlattice approach10.1063/1.1433906 ↗
39. Silicon-rich SiO2/SiO2 multilayers: a promising material for the third generation of solar cell10.1063/1.3156730 ↗
40. Graded-size Si-nanocrystal-multilayer solar cells10.1063/1.4766307 ↗
41. Effect of Auger recombination induced by donor and acceptor states on luminescence properties of silicon quantum Dots/SiO2 multilayers10.1016/j.jallcom.2019.06.171 ↗
42. Silicon dioxide thin film luminescence in comparison with bulk silica10.1016/S0022-3093(97)00437-7 ↗
43. Skuja · 1998
44. Self-trapped excitons in silicon dioxide: mechanism and properties10.1103/PhysRevLett.95.156401 ↗
45. Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass10.1103/PhysRevB.44.12043 ↗
46. Luminescence of polymorphous SiO210.1016/j.radmeas.2015.12.002 ↗
47. Trukhin · 1999
48. Time-resolved study of laser-induced colour centres in10.1088/0953-8984/8/9/018 ↗
49. Characterization of exciton self-trapping in amorphous silica10.1016/j.jnoncrysol.2006.01.095 ↗
50. Competition between green self-trapped-exciton and red non-bridging-oxygen emissions in SiO2 under interband excitation10.1038/s42005-018-0069-5 ↗
51. In situ spectroscopic measurement of transmitted light related to defect formation in SiO2 during femtosecond laser irradiation10.1063/1.1623939 ↗
52. On the origin of Si nanocrystal formation in a Si suboxide matrix10.1063/1.2800268 ↗
53. Structure and diffusion of excess Si atoms in SiO210.1103/PhysRevB.72.205204 ↗
54. Primary relaxation processes at the band edge of SiO210.1103/PhysRevLett.70.3588 ↗
55. Theory of defects in vitreous silicon dioxide10.1103/PhysRevB.27.3780 ↗
56. Spectroscopic parameters related to non-bridging oxygen hole centers in amorphous-SiO210.1016/j.jnoncrysol.2005.12.001 ↗
57. Designing efficient Si quantum dots and LEDs by quantifying ligand effects10.1021/acsami.1c18779 ↗
58. Ligand effects on photoluminescence and electroluminescence of silicon quantum dots for light-emitting diodes10.1021/acsanm.2c00811 ↗
59. Orange–red Si quantum dot LEDs from recycled rice husks10.1021/acssuschemeng.1c04985 ↗