Side effects of the strain-doping approach to develop optical materials based on Ge
Source abstract
Abstract
Abstract Following the strain-doping approach for development of Ge based optical gain material, we have studied the impact of doping and strain on the optical properties of Germanium. Emphasizing the importance of the bandgap narrowing effect due to doping on the emission wavelength, we have computed a strain-doping-energy maps, which provide the strain and doping windows that can be considered in order to achieve a specific value of the Γ bandgap. Finally, we discuss the polarization of the emitted light, and its dependence on strains.
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Research context
OpenAlex topics: Photonic and Optical Devices · Silicon Nanostructures and Photoluminescence · Semiconductor Quantum Structures and Devices
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