Epitaxial growth and microstructure of cubic SiC films on Si substrates
Source abstract
Abstract
Abstiact Cubic SiC (3C-SiC) thin films have been heteroepitaxially grown on (100) Si substrates via atmospheric pressure chemical vapor deposition process with SiH 4 -C 3 H 8 -H 2 reaction system. Temperature dependence of microstructure and chemical composition of the films were investigated using X-ray diffraction spectrum, scanning electron microscopy and Auger electron spectroscopy An optimum condition for the growth of SiC/Si films was determined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Thin-Film Transistor Technologies
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References (12)
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1. Baliga · 1996
2. Andrew · IEEE Trans. Electron Dev. · 1992 · 39 · 6410.1109/16.108213 ↗
3. Susumu · Jpn. J. Appl. Phys. · 1994 · 33 · 183310.1143/JJAP.33.1833 ↗
4. Kong · Appl. Phys. Lett. · 1987 · 51 · 44210.1063/1.98416 ↗
5. Scholz · Appl. Phys. Lett. · 1995 · 67 · 145310.1063/1.114492 ↗
6. Scholz · Appl. Phys. A · 1997 · 64 · 11510.1007/s003390050452 ↗
7. Scholz · Appl. Phys. A · 1998 · 66 · 5910.1007/s003390050638 ↗
8. Möller · Appl. Phys. A · 1999 · 68 · 46110.1007/s003390050924 ↗
9. Addamiano · Appl. Phys. Lett. · 1984 · 44 · 52510.1063/1.94820 ↗
10. Yamaguchi · Sens. Actuat. A · 1996 · 54 · 69510.1016/S0924-4247(97)80040-4 ↗
11. Schor · IEEE Trans. Electron Dev. · 1993 · 40 · 109310.1109/16.214734 ↗
12. Kingon · J. Am. Ceram. Soc. · 1983 · 66 · 55810.1111/j.1151-2916.1983.tb10091.x ↗