Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity
Source abstract
Abstract
Abstract The pulse lasing in the broadband spectral range 420–590 nm was obtained from two squeezed together heavily Si doped Al0.74Ga0.26N/AlN/Al2O3 structures with external cavity under pump radiation with λp = 266 nm wavelength. These structures were grown by molecular beam epitaxy on (0001) oriented thick sapphire substrates. Stimulated emission at room temperature was observed with optical pumping thresholds 50 kW/cm2 in the semiconfocal cavity. The linear transverse-electric polarization dominates in the output emission. The optical gain coefficients values of (0.12–6) × 103 cm−1 for Al0.74Ga0.26N:Si films with inhomogeneous luminescence broadening were measured at 10–600 kW/cm2 pump power density radiation with 266 nm wavelength, 8 ns pulse duration and 10 Hz repetition rate.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
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