Controlling optical polarization of {11–22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

Abstract We successfully fabricated {11–22} multiple quantum wells (MQWs) having different emission peak wavelengths on partially or completely relaxed thick InGaN buffer layers with different In contents formed on a semipolar {11–22} GaN layer, which was grown on a patterned r-plane sapphire substrate. The polarization properties changed significantly with changing in In content and thickness for InGaN buffer layer. For the same In content of the InGaN buffer layer, the optical polarization changed with an increase in the thickness of the underlying InGaN buffer layer, indicating a change in the relaxation ratio of the InGaN buffer layer. Similarly, for the same thickness of the InGaN buffer layer, the optical polarization changed by changing In content of the InGaN buffer layer. Thus, the degree of optical polarization could be controlled by varying the In content of the underlying InGaN buffer layer.