Monolayer WS2 based electro-absorption modulator
Source abstract
Abstract
Abstract Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 μm-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Advanced Fiber Laser Technologies
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References (26)
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