150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures
Source abstract
Abstract
Abstract Low-temperature (T = 30 K) photoluminescence (PL) and post thermal annealing effects on 150 KeV proton irradiated GaInAsN bulk, single quantum well and triple quantum well structures (Eg ~ 1.0 eV) have been investigated. The nitrogen proportion of the samples was confirmed by high-resolution X-ray diffraction (HR-XRD) measurement as 0.26%, 0.30% and 0.20% for GaInAsN bulk, SQW, and MQW samples, respectively. The result shows that the PL intensity of GaInAsN materials degraded seriously by proton irradiation. The PL intensity enhancement were observed for all three types of sample after thermal annealing at 650 °C for 5 min, and MQW sample was recovered by the factor bigger than 100. The irradiation induced red-shift and thermal annealing induced blue-shift phenomena were analyzed by SRIM simulation result and theoretical models of InGaAs band structure.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Properties of dilute InAsN layers grown by liquid phase epitaxy”10.1063/1.2975166 ↗
2. Luminescence of as-grown and thermally annealed GaAsN/GaAs”10.1063/1.121206 ↗
3. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers”10.1063/1.1511290 ↗
4. GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage”10.1116/1.2200376 ↗
5. Dilute nitrides for 4- and 6- junction space solar cells”
6. Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy”10.1063/1.1396316 ↗
7. Effects of rapid thermal annealing conditions on GaInNAs band gap blueshift and photoluminescence intensity10.1063/1.2200877 ↗
8. Electron-irradiation enhanced photoluminescence from GaInAsN/GaAs quantum wells subject to thermal annealing ”10.1063/1.1834997 ↗
9. Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation”10.1088/0268-1242/28/2/025020 ↗
10. Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers10.1016/j.jlumin.2012.12.008 ↗
11. Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy10.1016/j.optmat.2016.12.007 ↗
12. Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy”10.1016/j.cap.2013.03.017 ↗
13. Low-energy proton irradiation effects on GaAs/Ge solar cells10.1016/j.solmat.2005.05.018 ↗
14. Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons”10.1016/j.solmat.2008.09.044 ↗
15. Proton radiation analysis of multi-junction space solar cells”10.1016/S0168-583X(03)00791-2 ↗
16. A study on the degradation of GaAs/Ge solar cells irradiated by ¡200 keV protons”10.1016/j.nimb.2007.11.010 ↗
17. Ziegler · 2013
18. H-induced dangling bonds in H–Isoelectronic-Impurity complexes formed in GaAs1-yNy alloys10.1103/PhysRevLett.98.206403 ↗
19. Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive lattice strain”10.1063/1.2335508 ↗
20. Effects of residual carbon and hydrogen atoms on electrical property of GaAsN films grown by chemical beam epitaxy”10.1143/JJAP.47.6910 ↗
21. Incorporation of nitrogen in nitride-arsenides: origin of improved luminescence efficiency after anneal”10.1063/1.1352675 ↗
22. Nitrogen pair luminescence in GaAs”10.1063/1.102495 ↗
23. Band Anticrossing in GaInNAs alloys”
24. Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence”10.1063/1.1454193 ↗
25. Radiation induced carrier enhancement and intrinsic defect transformation in n GaAs”10.1063/1.354716 ↗
26. Electron irradiation of GaAs: improvement of transport properties and observation of DXlike centers at ambient pressure”10.1063/1.354402 ↗
27. Formation and dissolution of D-N complexes in dilute nitrides”10.1103/PhysRevB.76.205323 ↗
28. Rapid thermal annealing in GaNxAs1-x/GaAs structures: effect of nitrogen reorganization on optical properties”10.1063/1.1467957 ↗
29. Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing”10.1016/j.jcrysgro.2005.01.020 ↗
30. Spatial correlations in GaInAsN alloys and their effects on band-gap enhancement and electron localization”10.1103/PhysRevLett.86.2609 ↗
31. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen”10.1103/PhysRevB.64.121203 ↗
32. Nitrogen incorporation into GaInNAs lattice-matched to GaAs: the effects of growth temperature and thermal annealing”10.1063/1.2112173 ↗