journal article·2018-10Open access

Effects of contact material on complex excitonic behaviour of monolayer MoS2

Youngsin Park, Soo Ho Choi, Geunsik Lee, Woochul Yang, Hyunsik Im

Optical Materials· Volume 84

Abstract

Abstract We investigated the optical behaviour of excitons in monolayer MoS 2 prepared on a 60 nm-thick metal (Au) ring structure patterned on SiO 2 . CVD-grown monolayer MoS 2 was transferred to the metal structure and placed in contact with three different environments simultaneously: SiO 2 , Au metal and air. The optical properties of the transferred MoS 2 on the substrates were characterized through micro-photoluminescence (μ-PL) measurements. PL peaks were observed near ∼1.82 eV for defect-related emission, ∼1.92 eV for an A exciton, which includes a neutral exciton and a trion, and ∼2.1 eV for a B exciton. The optical band gap and exciton-phonon interaction of the samples on the three substrates were investigated by measuring the temperature-dependent photoluminescence.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

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References (27)

Show source-provided references
1. The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory10.1063/1.3672219 ↗
2. Influence of excited carriers on the optical and electronic properties of MoS210.1021/nl500595u ↗
3. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
4. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
5. Photoluminescence from chemically exfoliated MoS210.1021/nl201874w ↗
6. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
7. Integrated circuits based on bilayer MoS2 transistors10.1021/nl302015v ↗
8. Optical spectrum of MoS2: many-body effects and diversity of exciton states10.1103/PhysRevLett.111.216805 ↗
9. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides10.1103/PhysRevB.86.115409 ↗
10. Tightly bound trions in monolayer MoS210.1038/nmat3505 ↗
11. Electrical control of neutral and charged excitons in a monolayer semiconductor10.1038/ncomms2498 ↗
12. Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer10.1038/s41467-017-02286-6 ↗
13. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates10.1038/srep03489 ↗
14. Low‐temperature photoluminescence of oxide‐covered single‐layer MoS210.1002/pssr.201105589 ↗
15. Interplay between many body effects and coulomb screening in the optical bandgap of atomically thin MoS210.1039/C7NR01834G ↗
16. Photoluminescence of freestanding single- and few-layer MoS210.1103/PhysRevB.89.125406 ↗
17. Gate control of Carrier distribution in k-space in MoS2 monolayer and bilayer crystals10.1103/PhysRevB.91.125305 ↗
18. Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices10.1021/nl5017283 ↗
19. Oxygen passivation mediated tunability of trion and excitons in MoS210.1103/PhysRevLett.119.077402 ↗
20. Theory of neutral and charged excitons in monolayer transition metal dichalchogenides10.1103/PhysRevB.88.045318 ↗
21. Absorption of light by excitons and trions in monolayers of metal dichalcogenide MoS2: experiments and theory10.1103/PhysRevB.89.205436 ↗
22. Temperature dependence of semiconductor bandgaps10.1063/1.104723 ↗
23. Long tailed trions in monolayer MoS2: temperature dependent asymmetry and resulting red-shift of trion photoluminescence spectra10.1038/s41598-017-14378-w ↗
24. Optical polarization and intervalley scattering in single layers of MoS2 and MoSe210.1038/srep25041 ↗
25. Excitonic linewidth approaching the homogeneous limit in MoS2-based van der Waals heterostructures
26. Temperature dependence of the energy gap in semiconductors10.1016/0031-8914(67)90062-6 ↗
27. Low-temperature photocarrier dynamics in monolayer MoS210.1063/1.3636402 ↗