Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals
Source abstract
Abstract
Abstract The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of O N - and V N -centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. One-dimensional heterostructures in semiconductor nanowhiskers10.1063/1.1447312 ↗
2. Semiconductor nanowhiskers: synthesis, properties, and applications10.1134/S106378260912001X ↗
3. Strong orange luminescence from AlN whiskers10.1016/j.matlet.2012.12.042 ↗
4. Formation mechanism and photoluminescence of AlN nanowhiskers10.1088/0022-3727/41/2/025101 ↗
5. Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering10.1016/j.optmat.2005.09.024 ↗
6. Characterization and photoluminescence of AlN: Eu films10.1016/j.optmat.2005.06.001 ↗
7. A high efficiency rare earth-free orange emitting phosphor10.1016/j.optmat.2015.04.013 ↗
8. Afterglow in bulk AlN single crystals under β-irradiation10.1016/j.jlumin.2012.03.066 ↗
9. Photoluminescence characterization of AIN nanowhiskers10.15407/fm21.01.021 ↗
10. Y.D. Afonin, A.R. Beketov, L.M. Zhukov, A.K. Panyushkin, L.D. Proskuriakov, Method for producing threadlike aluminum nitride, RF Patent No 2106298 priority of 10.03.1998.
11. A.S. Vokhmintsev, M.D. Fedorov, I.A. Weinstein, Device for electroluminescence investigating, RF Patent No 146709 priority of 20.10.2014.
12. File No 01-073-7288 in diffraction reference database PDF-2 ICDD.
13. Blue electroluminescence of AlN nanowhiskers10.1134/S1063785015040161 ↗
14. Electroluminescence from AlN nanowires grown on p-SiC substrate10.1063/1.3513308 ↗
15. Ultraviolet electroluminescence in AlN10.1063/1.88788 ↗
16. Point-defect complexes and broadband luminescence in GaN and AlN10.1103/PhysRevB.55.9571 ↗
17. Point defect content and optical transitions in bulk aluminum nitride crystals10.1002/pssb.200880753 ↗
18. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN10.1063/1.4824731 ↗
19. Luminescence properties of AlN nanostructures revealed under UV light irradiation10.1088/1742-6596/93/1/012040 ↗
20. Pelant · 2012
21. Thin films
22. Thermoluminescence kinetics of oxygen-related centers in AlN single crystals10.1016/j.diamond.2012.02.004 ↗
23. Field emission from AlN nanorod array10.1063/1.1899763 ↗
24. Anisotropic growth of aluminum nitride nanostructures for a field emission application
25. The growth of one-dimensional Single-crystalline AlN nanostructures by HVPE and their field emission properties10.1002/cvde.200906801 ↗
26. Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies10.1088/1674-1056/18/5/048 ↗