Pentacene growth on 3-aminopropyltrimethoxysilane modified silicon dioxide

Abstract The 3-aminopropyltrimethoxysilane (APTMS) self-assembled monolayer (SAM) has been used as a buffer layer between a dielectric (native SiO 2 ) and the pentacene (Pn) thin film. Based on in situ low-energy electron microscope (LEEM) and ex-situ noncontact atomic force microscope (nc-AFM) measurements, it is shown that passivation of SiO 2 with APTMS significantly improves the morphology of pentacene films. The observed lower nucleation density of Pn islands on the APTMS-treated surface results in improved crystallinity of the Pn layer. Moreover, the de-wetting of Pn monolayer is prevented by the interfacial APTMS SAM. This has significant potential for the improvement of the FET carrier mobility in Pn-based electronic devices.