Passively Q-switched Nd:YVO 4 laser with MoS 2 /GaAs saturable absorber
Source abstract
Abstract
Abstract The molybdenum disulfide (MoS 2 ) nanosheets adhered on GaAs wafer is employed as MoS 2 /GaAs saturable absorber (SA) in the Q-switched Nd:YVO 4 laser. The MoS 2 /GaAs SA is successfully fabricated by liquid-exfoliated method of transferring a few-layer MoS 2 to 350 μm-depth GaAs wafer. Under the absorbed pump power of 1.77 W, the pulses with 321.6 mW average-output power, 51.3ns pulse duration and 769.7 kHz repetition rate can be obtained, which reveals the potential of MoS 2 /GaAs heterostructure in generation of short pulse duration. The pulse energy and the peak power are 417.8 nJ and 8.14 W respectively, under the same absorbed pump power. It is promising that the heterostructure SAs with two-dimentional nanomaterials and traditional SAs can be used in optical modulation to get shorter pulse duration.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Fiber Laser Technologies · Solid State Laser Technologies · Laser-Matter Interactions and Applications
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References (32)
Show source-provided references
1. Two-Dimensional Nanosheets produced by liquid exfoliation of layered materials10.1126/science.1194975 ↗
2. Optical modulators with 2D layered materials10.1038/nphoton.2016.15 ↗
3. Atomic-layer graphene as a saturable absorber for ultrafast pulsed lasers10.1002/adfm.200901007 ↗
4. Generation of 30-fs pulses from a diode-pumped graphene mode-locked Yb:CaYAlO4 laser10.1364/OL.41.000890 ↗
5. Strain-induced gap modification in black phosphorus10.1103/PhysRevLett.112.176801 ↗
6. Black phosphorus saturable absorber for ultrashort pulse generation10.1063/1.4927673 ↗
7. Tunable Q-switched fiber laser based on saturable edge-state absorption in few-layer molybdenum disulfide (MoS2)10.1364/OE.22.031113 ↗
8. Passively Q-switched mode-locked Tm:LLF laser with a MoS2 saturable absorber10.3788/COL201513.081405 ↗
9. Nonlinear saturable absorption of vertically stood WS2 nanoplates10.1364/OL.39.006450 ↗
10. WS2 mode-locked ultrafast fiber laser10.1038/srep07965 ↗
11. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
12. Coherent atomic and electronic heterostructures of single-layer MoS210.1021/nn302422x ↗
13. Molybdenum disulfide (MoS2) as a broadband saturable absorber for ultra-fast photonics10.1364/OE.22.007249 ↗
14. Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber10.1364/OL.39.004591 ↗
15. Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction10.1038/srep06346 ↗
16. Broadband few-layer MoS2 saturable absorbers, adv
17. Nonvolatile memory cells based on MoS2/graphene heterostructures10.1021/nn3059136 ↗
18. graphene/MoS2 hybrid technology for large-scale two-dimensional electronics10.1021/nl404795z ↗
19. Optical identification of MoS2/grapheme heterostructure on SiO2/Si substrate10.1364/OE.22.015969 ↗
20. Tunable electrical and optical characteristics In monolayer graphene and few-layer MoS2 heterostructure devices10.1021/acs.nanolett.5b01030 ↗
21. Preparation of 2D MoS2/graphene heterostructure through a monolayer intercalation method and its application as an optical modulator in pulsed laser generation10.1002/adom.201500012 ↗
22. First-principles Raman spectra of MoS2, WS2 and their heterostructures10.1039/c3nr06906k ↗
23. Ultrafast charge separation and indirect exciton formation in a MoS2/MoSe2 van der Waals heterostructure10.1021/nn505736z ↗
24. Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique10.1063/1.101623 ↗
25. Q switching of a diode-pumped Nd:YAG laser with GaAs10.1364/OL.21.001244 ↗
26. Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber
27. 18.5% efficient graphene/GaAs vander Waals heterostructure solar cell10.1016/j.nanoen.2015.07.003 ↗
28. Modeling and simulation of graphene-gated graphene-GaAs schottky junction field-effect solar cell for its performance enhancement10.1109/TED.2015.2478136 ↗
29. Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride10.1038/srep15103 ↗
30. Single crystals of MoS2 several molecular layers thick10.1063/1.1708627 ↗
31. Photoluminescence from chemically exfoliated MoS210.1021/nl201874w ↗
32. Native oxides formation and surface wettability of epitaxial III–V materials: the case of InP and GaAs10.1016/j.apsusc.2016.04.153 ↗