Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region
Source abstract
Abstract
Abstract InGaN based LEDs with V-pits structure and consists of n-GaN, In0.1Ga0.9N/GaN superlattices (SLs), In0.15Ga0.85N blue quantum wells (BQWs), In0.25Ga0.75N green quantum wells (GQWs) and p-GaN were grown on Si substrate. Carrier transportation is studied by temperature-dependent electroluminescence (TDEL). With n-doping in the SLs and BQWs, the major emission peak is from the GQWs. Under low temperature and high injection current, side peaks emitted form SLs and BQWs can be observed. Reducing the number of GQWs will result in stronger side peaks. We propose that the disequilibrium in carrier concentration bring high drift velocity to the holes, partial holes fly across the sidewall of V-pits to n-side and recombined with the electrons in the BQWs and SLs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. Highly pure green light emission of perovskite CsPbBr3 quantum dots and their application for green light-emitting diodes10.1364/OE.24.015071 ↗
2. Tunable luminescent CsPb2Br5 nanoplatelets: applications in light-emitting diodes and photodetectors10.1364/PRJ.5.000473 ↗
3. Improvement of quantum efficiency by employing active-layer friendly lattice-matched InAlN electron blocking layer in green light emitting diodes10.1063/1.3353995 ↗
4. Nitride-based green light-emitting diodes with various p-type layers10.1109/JDT.2007.896719 ↗
5. Highly P-typed Mg-doped GaN films grown with GaN buffer layers10.1143/JJAP.30.L1708 ↗
6. Efficiency droop reduction in InGaN LEDs by alternating AlGaN barriers with GaN barriers10.1109/LPT.2015.2394492 ↗
7. Performance enhancement of blue InGaN light emitting diodes with a GaN–AlGaN–GaN last barrier and without an AlGaN electron blocking layer10.1109/JQE.2014.2305451 ↗
8. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer10.1364/OL.35.003285 ↗
9. Enhanced performance of InGaN light emitting diodes with InGaN/GaN superlattice and graded-composition InGaN/GaN superlattice interlayers10.1002/pssa.201431088 ↗
10. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN, quantum wells produces a large increase in the light emission efficiency10.1103/PhysRevLett.95.127402 ↗
11. Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes10.1063/1.4812810 ↗
12. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes10.1063/1.4901828 ↗
13. Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes10.1007/s11082-016-0464-7 ↗
14. A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices10.1063/1.4935945 ↗
15. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate10.1007/s00339-014-8283-9 ↗
16. Highly efficient GaN-based light emitting diodes with micropits10.1063/1.2402219 ↗
17. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate10.1063/1.3640229 ↗
18. Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures
19. Mechanisms of band-edge emission in Mg-doped P-type GaN10.1063/1.116282 ↗
20. Self-compensation in Mg doped p-type GaN grown by MOCVD10.1016/S0022-0248(98)00578-8 ↗
21. Nature of the 2.8eV photoluminescence band in Mg doped GaN10.1063/1.120983 ↗
22. Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes10.1063/1.3244203 ↗
23. Barrier effect on hole transport and Carrier distribution in InGaN/GaN multiple quantum well visible light- emitting diodes
24. Effects of thickness ratio of InGaN to GaN in super- lattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates10.1063/1.5000134 ↗
25. Activation of acceptors in Mg- doped GaN grown by metalorganic chemical vapor deposition10.1063/1.116503 ↗
26. Growth and luminescence properties of Mg-doped GaN prepared by MOVPE10.1149/1.2086742 ↗