journal article·2018-09

Enhanced crystalline size of undoped GaN powders obtained by nitridation of metallic gallium

Erick Gastellóu, Crisoforo Morales, Rafael García, Godofredo García, Gustavo A. Hirata, Reina Galeazzi, Ana M. Herrera, Enrique Rosendo, Tomas Díaz, Juan R. Ramos, Roman Romano, Antonio Coyopol

Optical Materials· Volume 83
Publisher page

Abstract

Abstract Optical and structural study of undoped GaN powders obtained by nitridation of metallic gallium and pyrolysis of Ga(NO3)3-CH6N4O polymer were made. A high synthesis efficiency for the nitridation of metallic gallium was observed, while the pyrolysis synthesis of the Ga(NO3)3-CH6N4O polymer was very low. The XRD patterns showed an intense peak in the orientation (101) of the hexagonal GaN in both cases. The photoluminescence spectrum for nitridation technique of metallic gallium at room temperature, shown how the point defects generated during the preparation of GaN powders allow the adequate incorporation of nitrogen and favor the crystal growth (sizes up to 3.6 μm length and 3 μm wide). The visible separation in the micro-Raman spectrum of the E1 and E2 modes in the samples obtained by nitridation of metallic gallium was an indicative of the contribution of interstitial gallium in the lattice vibration, an aspect not reported yet. On the other hand, SEM studies confirmed the higher crystalline size of the material obtained by nitridation of metallic gallium compared with the synthesized by pyrolysis of the Ga(NO3)3-CH6N4O metalorganic complex polymer.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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