Irradiation-induced persistent photoconductivity in CdS films prepared by chemical bath deposition

Persistent photoconductivity (PPC) in nitrogen ion irradiated CdS thin films prepared by chemical bath deposition (CBD) technique is reported. The PPC phenomenon observed in the nitrogen ion irradiated CdS thin films is due to the complex nature of the defects caused during irradiation. Nitrogen ion implantation caused the reduction in the optical band gap of the films revealing the formation of defect levels. The structure of the virgin and implanted films studied using the X-ray diffraction technique is reported.