journal article·2011-05Open access

Site occupancy determination of Eu/Y doped in Ca2SnO4 phosphor by electron channeling microanalysis

S. Muto, Y. Fujimichi, K. Tatsumi, T. Kawano, H. Yamane

Optical Materials· Volume 33· Issue 7

Abstract

Energy-dispersive X-ray analysis based on electron channeling effects in transmission electron microscopy (TEM) was performed on Ca2SnO4 phosphor materials doped with Eu3+/Y3+ at various concentrations, which showed red photoluminescence associated with the Eu3+5D0–7F2 electric dipole transition. The method provided direct information on which host element site impurity elements occupy. The local atomic configurations and chemical bonding states associated with dopant impurities with different ionic radii were also examined by TEM–electron energy-loss spectroscopy (TEM–EELS).
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Nuclear materials and radiation effects · Luminescence Properties of Advanced Materials

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