Electro-optic effect in c-axis oriented ZnO thin films prepared by rf magnetron sputtering

Abstract Electro-optic effect in c -axis oriented ZnO thin films prepared by rf magnetron sputtering technique is demonstrated. The effect was measured using the reflection of light polarized with the electric vector parallel to the plane of incidence. The reflected light intensity changed with the applied electric field and showed a modulation of about 1.5% at an applied voltage of 32 V at an angle of incidence of 42.8° for an Ag (300 A)/ZnO (1.3 μm)/Au (1000 A)/glass Fabry–Perot structure. The results suggest the potential of c -axis oriented ZnO thin films for application as a thin film based reflection Fabry–Perot light intensity modulator.