Effect of flux composition ratio on the coalescence growth of GaN crystals by the Na-flux method
Source abstract
Abstract
Abstract Previously, we demonstrated that the Na-flux coalescence growth technique had high potential for the fabrication of large-diameter, high-quality GaN crystals. This present study investigates the relation between the flux composition (Ga/Na) and void formation in GaN crystals grown by this technique. It was found that void formation decreases with a decrease in the Ga composition of the flux and that stable coalescence with no voids at the GaN grain boundaries occurred for a Ga composition of 15 mol%. Band-edge emission peaks were clearly observed for a crystal grown at 15 mol% Ga composition, while other peaks were hardly observed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
Show source-provided references
1. High-power GaN P-N junction blue-light-emitting diodes10.1143/JJAP.30.L1998 ↗
2. High breakdown voltage AlGaN–GaN power-HEMT design and high current density switching behavior10.1109/TED.2003.819248 ↗
3. Dislocations in GaN-based laser diodes on epitaxial lateral overgrown GaN layers10.1002/1521-396X(200111)188:1<69::AID-PSSA69>3.0.CO;2-8 ↗
4. GaN substrates―progress, status, and prospects10.1109/JSTQE.2009.2015057 ↗
5. Bulk GaN crystals grown by HVPE10.1016/j.jcrysgro.2009.01.046 ↗
6. Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy10.1016/j.jcrysgro.2009.01.073 ↗
7. GaN crystallization by the high-pressure solution growth method on HVPE bulk seed10.1016/j.jcrysgro.2008.06.030 ↗
8. Prospects for the ammonothermal growth of large GaN crystal10.1016/j.jcrysgro.2007.04.010 ↗
9. Status and perspectives of the ammonothermal growth of GaN substrates10.1016/j.jcrysgro.2007.11.088 ↗
10. Ammonothermal growth of bulk GaN10.1016/j.jcrysgro.2008.06.005 ↗
11. Bulk ammonothermal GaN10.1016/j.jcrysgro.2009.01.052 ↗
12. Morphology and characterization of GaN single crystals grown in a Na flux10.1016/S0022-0248(97)00480-6 ↗
13. Growth of 5 mm GaN single crystals at 750 °C from an Na–Ga melt10.1021/cg005521c ↗
14. Time dependence of the growth morphology of GaN single crystals prepared in a Na–Ga melt10.1143/JJAP.44.3157 ↗
15. Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method10.1016/j.jcrysgro.2008.06.008 ↗
16. Growth of large GaN single crystals on high-quality GaN seed by carbon-added Na flux method10.1143/APEX.3.075501 ↗
17. Imade · Cryst. Growth Des. · 2011 · 11 · 234610.1021/cg2000443 ↗
18. Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth10.1016/j.jcrysgro.2015.07.001 ↗
19. Growth of bulk GaN crystals by the Na-flux point seed technique10.7567/JJAP.53.05FA06 ↗
20. Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique10.7567/APEX.7.035503 ↗
21. Study of the metastable region in the growth of GaN using the Na flux method10.1016/j.jcrysgro.2009.07.044 ↗
22. A first-principles investigation on the mechanism of nitrogen dissolution in the Na flux method10.1063/1.2713945 ↗
23. Variation of photoluminescence with carrier concentration in GaN10.1016/0022-2313(72)90032-4 ↗
24. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition10.1016/j.jcrysgro.2010.09.026 ↗
25. DX-like behavior of oxygen in GaN10.1016/S0921-4526(01)00402-1 ↗