journal article·2011-11

Production of orientation-patterned GaP templates using wafer fusion techniques

Krongtip Termkoa, Shivashankar Vangala, William Goodhue, Rita Peterson, Robert Bedford, Vladimir Tassev, Candace Lynch, David Bliss

Optical Materials· Volume 34· Issue 1
Publisher page

Abstract

Abstract Nonlinear optical frequency conversion is an effective technique for generating infrared (IR) and terahertz (THz) wavelengths not readily available from existing laser sources. Birefringent materials such as LiNbO3 are often used to generate wavelengths where gaps exist, but are unsuitable in the mid-IR, far-IR, and THz regions as these materials are often opaque in these regions. As an alternative, GaAs has been employed for frequency conversion in these regions using quasi-phase-matching (QPM) to overcome the material’s lack of birefringence. QPM has been successfully demonstrated in GaAs using fused stacks of thin alternately oriented layers or inverted orientation patterned (OP) grating templates overgrown with thick columnar GaAs layers. Although GaAs has a high nonlinear coefficient d14 = 170 pm/V at 1.064 μm and good thermal conductivity (52 W/m K), it suffers from strong two-photon absorption below 1.7 μm making it inefficient when pumped with a source less than or equal to this wavelength. GaP also has a high nonlinear coefficient d14 = 71 pm/V at 1.064 μm, better thermal conductivity (110 W/m K) and much lower two-photon absorption in the 1 μm region. Therefore, OPGaP is desirable for NLO applications in the mid-IR and THz that use commercially available pump lasers in the 1.06–1.55 μm wavelength range. In this work the fabrication of OPGaP templates suitable for thick columnar hydride vapor phase epitaxial growth of GaP is reported using a commercially viable wafer fusion technique.
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Research context

OpenAlex topics: Photorefractive and Nonlinear Optics · Advanced Fiber Laser Technologies · Solid State Laser Technologies

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References (22)

Show source-provided references
1. Nonlinear optical frequency conversion10.1063/1.881430 ↗
2. Sublattice reversal epitaxy: a novel technique for fabricating domain-inverted compound semiconductor structures10.1016/S1468-6996(00)00020-6 ↗
3. Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation10.1364/OL.27.000628 ↗
4. A quasi-phase-matching technique for efficient optical mixing and frequency doubling10.1063/1.322930 ↗
5. Diffusion bonding of GaAs wafers for nonlinear optics applications10.1149/1.1837608 ↗
6. Efficient second-harmonic generation of a CO2 laser with a quasi-phase-matched GaAs crystal10.1364/OL.23.001511 ↗
7. Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures10.1063/1.102818 ↗
8. MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy10.1016/S0022-0248(98)01317-7 ↗
9. All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion10.1063/1.1389326 ↗
10. Growth of mm-thick orientation-patterned GaAs for IR and THz generation10.1016/j.jcrysgro.2008.08.050 ↗
11. Progress in orientation-patterned GaAs for next-generation nonlinear optical devices10.1117/12.766581 ↗
12. 20-50 kHz Mid-Infrared OPGaAs OPO
13. Wafer-fused orientation pattern GaAs10.1117/12.762315 ↗
14. Improved dispersion relation for GaAs and applications to nonlinear optics10.1063/1.1621740 ↗
15. Sellmerier parameters for ZnGaP2 and GaP10.1063/1.372050 ↗
16. Single-phase growth studies of GaP on Si by solid-source molecular beam epitaxy
17. Quasi-phase-matched parametric fluorescence in periodically inverted GaP waveguide10.1143/APEX.2.061101 ↗
18. Terahertz-wave generation from quasi-phase-matched GaP for 1.55μm pumping10.1063/1.2174832 ↗
19. Fabrication and characterization of a quasi-phase-matched GaP optical device for terahertz-wave generation10.1016/j.optmat.2009.08.011 ↗
20. Wafer fusion: a novel technique for optoelectronic device fabrication and monolithic integration10.1063/1.102697 ↗
21. Bromine ion-beam-assisted etching of III–V semiconductors10.1007/s11664-999-0234-4 ↗
22. Low pressure–temperature–gas flow HVPE growth of GaP for nonlinear optical frequency conversion devices10.1016/j.jcrysgro.2009.12.053 ↗