Electrical properties study of porous silicon layer prepared by electrochemical etching
Source abstract
Abstract
Abstract This paper considers an AC and DC electrical features of porous silicon (PSi) layers prepared by electrochemical etching. Measurements of capacitance–frequency ( C – f ), conductance–frequency ( G – f ), photoconductivity (PC) and current–voltage ( I – V ) were used for the investigation of the electrical properties of these structures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
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References (8)
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