Photoluminescence spectra of MnIn2S4
Source abstract
Abstract
MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependencies of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor–acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect donor level with a thermal ionization energy of about 0.17 eV. The broad band of PL spectra indicates that radiative recombination is related to multiphonon optical processes. The energy of the involved phonon was found to be around 0.025 eV and the energy of the acceptor level is about 0.86 eV.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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