Growth and characterization of high proficient second order nonlinear optical material: l-Valinium Picrate

Abstract High-quality translucent solitary crystals of l -Valinium Picrate (LVAP) were lucratively grown by a conventional solution growth method and unidirectional growth technique of Sankaranarayanan–Ramasamy. The as grown organic LVAP crystal belongs to monoclinic crystal system with noncentrosymmetric space group P21. The seed crystal acquired by conventional solution growth method was slash along the (0 1 0) direction and consequently employed for unidirectional growth. A bulky extent single crystal was fully fledged by slow cooling procedure with facilitate of solubility data. The unit cell parameters were resolved from single crystal X-ray diffraction studies. The grown crystals by both conventional solution growth (SEST) and SR methods were subjected to assorted characterization processes such as HRXRD, UV–Vis, dielectric, Hardness and Laser damage threshold studies to investigate the properties. The etching and high resolution X-ray diffraction studies designate that the unidirectional grown LVAP crystal encompass good crystalline excellence and lesser amount of imperfections. The UV–Visible study reveals the ocular excellence of the SR grown LVAP crystal is superior to SEST grown crystal. The laser damage threshold of SEST and SR grown LVAP crystals has been examined and SR grown LVAP crystal boast higher damage threshold than the conventional method grown crystal. Microhardness measurements at dissimilar temperatures show that crystals fully fledged by SR method contain elevated mechanical steadiness than the crystals grown by SEST method. Dielectric dispersion is soaring in SR grown crystal compared to SEST grown LVAP crystal. The piezoelectric nature and the relative Second Harmonic Generation (for various particle sizes) of the material were also studied.