Energy level splitting and luminescence enhancement in AlN:Er by an external magnetic field
Source abstract
Abstract
Abstract Sputter deposited thin film AlN:Er (1 at.%) emits at 554 nm and 561 nm as a result of 2 H 11/2 → 4 I 15/2 and 4 S 3/2 → 4 I 15/2 transitions under 532 nm NdYAG laser and 783.3 nm crystal laser excitation. An external magnetic field of 0.1 T enhances the green emission and splits the 4 S 3/2 energy level in two sub-levels with a difference of 0.013 eV. The splitting of energy level produces new emission from Er 3+ with a wavelength of 564.5 nm. Infrared emission is also observed at 1552 nm as a result of 4 I 13/2 → 4 I 15/2 transition. Enhanced luminescence shows the suitability of Er 3+ for high efficiency optical devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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