journal article·2020-11

Efficiency improvement of the heterojunction solar cell using an antireflection Hf-doped In2O3 thin film prepared via glancing angle magnetron sputtering technology

G.H. Wang, C.Y. Shi, L. Zhao, L.B. Mo, H.W. Diao, W.J. Wang

Optical Materials· Volume 109
Publisher page

Abstract

Abstract The needle-like antireflection Hf-doped In2O3 thin films (IHFO) were prepared at a substrate temperature of 200 °C by glancing angle radio frequency magnetron sputtering technology. The structural, electrical and optical properties of the needle-like IHFO thin films were characterized. The significant reduction of reflection loss of the conventional and needle-like IHFO bilayer films deposited on the textured silicon was observed. The short-circuit current and efficiency of the solar cell were improved by 0.52 mA/cm2 and 0.39% utilizing a needle-like IHFO thin film as an antireflection layer.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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