Spectroscopic characterization of Sm3+ doped (Lu0.4Gd0.6)2SiO5 single crystals

Abstract Results of spectroscopic investigations of single crystal with general formula (Lu 0.4 Gd 0.55 Sm 0.05 ) 2 SiO 5 are presented. Optical anisotropy of material is evidenced in polarized absorption as well as in emission spectra. Based on polarized absorption spectra calculations in framework of Judd–Ofelt fenemenological model was done. Intensity parameters Ω t was evaluated to be Ω 2 = 1.26 (±0.46), Ω 4 = 4.68 (±0.36), Ω 6 = 2.32 (±0.16) [10 −20 cm 2 ]. Obtained value of radiative lifetime from Inokuti Hirayama model (1.80 ms) is close to calculated from Judd–Ofelt analysis (1.89 ms), what results in ca. 95% theoretical quantum efficiency. Strong absorption line located at 403 nm, could be utilized for efficient excitation of material by InGaN/GaN laser diodes. Intense emission line at 601 nm, with experimental branching ratio β = 42.9%, gives high chance for obtaining laser action in four level operation scheme.