journal article·2007-07

Crystal growth, optical and luminescence properties of Pr-doped Y2SiO5 single crystals

A. Novoselov, H. Ogino, A. Yoshikawa, M. Nikl, J. Pejchal, A. Beitlerova, T. Fukuda

Optical Materials· Volume 29· Issue 11
Publisher page

Abstract

Abstract Using the micro-pulling-down method, Pr3+-doped Y2SiO5 single crystals have been grown and their optical and luminescence properties have been investigated. The position of the lowest 5d absorption level was found at about 246 nm and an intense and fast 5d–4f luminescence peaking round 275 nm with a shoulder round 315 nm has been observed at room temperature. Photoluminescence decay time at room temperature was obtained to be of about 17 ns in the leading decay component.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Radiation Detection and Scintillator Technologies · Nuclear materials and radiation effects

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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