Application of swift and heavy ion implantation to the formation of chalcogenide glass optical waveguides

Abstract We demonstrate the application of swift and heavy ion implantation to generate optical waveguides in amorphous materials. Gallium lanthanum sulfide (GLS) and gallium lanthanum oxysulfide (GLSO) glass waveguides are fabricated using Ar implantation at 60 MeV and 2 × 1012 ions/cm2. A “well” region with increased refractive index (0.1% for GLS and 0.3% for GLSO) is formed near the surface of the glass based on the electronic energy deposition; a “barrier” layer with decreased refractive index is formed inside the glass due to the nuclear energy deposition. As a result, the waveguides exhibit a refractive index distribution of “well + barrier” type. It is supposed that the change in local structure order of the substrate causes the “well” formation. The propagation loss is 2.0 dB/cm for GLS and 2.2 dB/cm for the GLSO glass waveguide.