journal article·2005-02

Recent progress in integrated waveguides based on oxidized porous silicon

M. Balucani, V. Bondarenko, A. Klusko, A. Ferrari

Optical Materials· Volume 27· Issue 5
Publisher page

Abstract

Abstract In this work we report the latest improvements in integrated optical waveguides based on oxidized porous silicon. Remarkably low propagation loss of 0.2 dB/cm in the visible is demonstrated. Straight waveguides of 1–10 cm long were fabricated in N+-type silicon substrates. Thickness of core region of all fabricated waveguides was of 8 μm while thickness of cladding layer was of 0.8, 1.5, and 2.5 μm. Optical loss in the visible and IR were measured by original method utilizing the 90° vertical bending at the waveguides endings which is a unique property of our waveguides. Significant improvement of the waveguide characteristics was obtained by optimizing the technological process: (a) eliminating the negative effect of swirl defects on uniformity of porous silicon layers; (b) developing the anodization regimes allowing the careful control of the porosity through the porous silicon thickness; (c) using silica mask instead of silicon nitride mask.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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