Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells
Source abstract
Abstract
Abstract Intrinsic amorphous silicon germanium (i-a-SiGe:H) films with V, U and VU shape band gap profiles for amorphous silicon germanium (a-SiGe:H) heterojunction solar cells were fabricated. The band gap profiles of i-a-SiGe:H were prepared by varying the GeH 4 and H 2 flow rates during the deposition process. The use of i-a-SiGe:H with band gap profile in an absorber layer for a-SiGe:H heterojunction solar cells was investigated. The solar cell using a VU shape band gap profile shows a higher efficiency compared to other shapes. The highest efficiency obtained for an a-SiGe:H heterojunction solar cell using the VU shape band gap profile technique was 9.4% ( V oc = 0.79 V, J sc = 19.0 mA/cm 2 and FF = 0.63).
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (42)
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