journal article·2006-05

Doping effects on 1.54 μm photoluminescence from Er-containing ZnO

Zhen Zhou, Toshitaka Komori, Tatsuya Ayukawa, Atsushi Koizumi, Noriaki Matsunami, Yoshikazu Takeda, Masahiko Morinaga

Optical Materials· Volume 28· Issue 6-7
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Abstract

Abstract Either N or P or metal impurities were introduced into Er-containing ZnO samples, and the doping effects on the photoluminescence (PL) spectra around 1.54 μm were investigated at room temperature. The N doping was found to increase the PL intensity by about 40 times, whereas the P doping did not increase the PL intensity significantly. The alkali metal ions, such as Li, Na, and K, affected the PL intensity apparently. In particular, the Li doping increased the PL intensity by about 90 times, and the strongest peak position shifted from 1.534 μm to 1.539 μm. The doping of N or Li was found to be very effective in enhancing the 1.54 μm PL intensity from the Er-containing ZnO.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Silicon Nanostructures and Photoluminescence · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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