Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

High quality N-doped ZnO films were grown at different RF powers on glass substrates by plasma-assisted metalorganic chemical vapor deposition. Scanning electron microscopy, X-ray diffraction and Hall analyses were carried out to investigate the effects of RF power variation on surface morphology, crystallinity and electrical properties of the ZnO films. Increasing the RF power resulted in compacter surface morphology and change of the crystallinity as well as incorporation of more N atoms. Films grown at 150 W exhibited the best p-type electrical properties. Moreover, room temperature photoluminescence spectra showed strong emission related to N acceptor.