Influence of Zn2+ doping on the lattice defects and photoluminescence studies of Sr2CeO4:Eu3+ nanophosphor: Applications for data encryption strategies

Abstract In the present work, luminescent Sr2CeO4:Eu3+ (5 mol %), Zn2+ (0.25–3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr2CeO4. The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range ∼3.18–3.63 eV. The incorporation of Zn2+ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn2+ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn2+ and Eu3+ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn2+ co-doping. The encryption strategies are provided using the photoluminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection.