Multi-dimensional spatial light communication made with on-chip InGaN photonic integration
Source abstract
Abstract
Abstract Here, we propose, fabricate and characterize suspended photonic integration of InGaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide and InGaN MQW-photodetector on a single chip. The unique light emission property of InGaN MQW-LED makes it feasible to establish multi-dimensional spatial data transmission using visible light. The in-plane light communication system is comprised of InGaN MQW-LED, waveguide and InGaN MQW-photodetector, and the out-of-plane data transmission is realized by detecting the free-space light emission via a commercial photodiode module. Moreover, a full-duplex light communication is experimentally demonstrated at a data transmission rate of 50 Mbps when both InGaN MQW-diodes operate under simultaneous light emission and detection mode. The in-plane superimposed signals are able to be extracted through the self-interference cancellation method, and the out-of-plane superimposed signals are in good agreement with the calculated signals according to the extracted transmitted signals. These results are promising for the development of on-chip InGaN photonic integration for diverse applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. Integrated GaN photonic circuits on silicon (100) for second harmonic generation10.1364/OE.19.010462 ↗
2. Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors10.1021/nl501124s ↗
3. Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology10.1088/0268-1242/28/9/094003 ↗
4. GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration10.1016/j.sse.2011.12.007 ↗
5. Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates10.1143/JJAP.45.L659 ↗
6. Demonstration of a semipolar (1013) InGaN/GaN green light emitting diode10.1063/1.2139841 ↗
7. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer10.1063/1.96549 ↗
8. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes10.1038/35022529 ↗
9. Recent advances in ZnO materials and devices10.1016/S0921-5107(00)00604-8 ↗
10. Nitride-based light-emitter and photodetector dual function devices with InGaN/GaN multiple quantum dot structures10.1016/j.jcrysgro.2008.01.028 ↗
11. Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si10.1063/1.1529309 ↗
12. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers10.1007/s11664-006-0105-1 ↗
13. Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111)10.1002/pssc.201300690 ↗
14. On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities10.1364/OE.24.006004 ↗
15. Monolithic integration of a suspended light-emitting diode with a Y-branch structure
16. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides10.1063/1.4947280 ↗
17. Visible-light communications using a CMOS-controlled micro-light-emitting-diode array10.1109/JLT.2011.2175090 ↗
18. Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics10.1063/1.4960007 ↗
19. High-speed GaN/GaInN nanowire array light-emitting diode on Silicon(111)10.1021/nl504447j ↗
20. Suspended GaN-based nanostructure for integrated optics10.1007/s00340-015-6293-8 ↗
21. Nano-LED array fabrication suitable for future single photon lithography10.1088/0957-4484/26/18/185302 ↗
22. Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes10.1063/1.4941923 ↗
23. Suspended p-n junction InGaN/GaN multiple-quantum-well device with selectable functionality
24. Applications of self-interference cancellation in 5G and beyond10.1109/MCOM.2014.6736751 ↗
25. Bharadia · 2013
26. Full-duplex wireless communications using off-the-shelf radios: feasibility and first results
27. Full duplex techniques for 5G networks: self-interference cancellation, protocol design, and relay selection10.1109/MCOM.2015.7105651 ↗