Titanium distribution profiles obtained by luminescence and LIBS measurements on Ti: Al 2 O 3 grown by Czochralski and Kyropoulos techniques

The titanium distributions in Ti-doped sapphires grown by Czochralski and Kyropoulos techniques were evaluated using Laser-Induced Breakdown Spectroscopy (LIBS) and luminescence characterizations. Distinctly different radial profiles of Ti⁴⁺ distribution were observed in the as grown Ti: Al₂O₃ crystals. The Ti⁴⁺ distribution in the crystal grown by Kyropoulos technique was analyzed as a function of the specific of the growth technique, the conclusion is significant for Ti: sapphire on laser application. Kyropoulos technique presents an advantage to reduce the proportion of Ti⁴⁺ in Ti: sapphire comparing to Czochralski technique.