journal article·2001-02

Spectroscopic properties of CeF3 and LuF3:Ce3+ thin films grown by molecular beam epitaxy

C. Dujardin, C. Pedrini, N. Garnier, A.N. Belsky, K. Lebbou, J.M. Ko, T. Fukuda

Optical Materials· Volume 16· Issue 1-2
Publisher page

Abstract

Abstract First results on optical properties of CeF3 and LuF3:Ce3+ thin films deposited by molecular beam epitaxy on both calcium fluoride and silicon substrates are presented. For the first time, absorption spectra have been measured and analyzed, and oscillator strengths of the 4f→5d absorption transitions have been deduced. Extra absorption and excitation bands at higher energy have been assigned to Ce 4f→6s and F 2p→Ce 5d transitions and one sharp band near the fundamental absorption to the exciton formation.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Radiation Detection and Scintillator Technologies · Ga2O3 and related materials · Luminescence Properties of Advanced Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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