journal article·2025-11

Plasma-driven defect modulation in ZnO thin films for superior UV sensing

Dong-Geon Lee, Junyoung Im, Mi-Jin Jin, Doo-Seung Um, Chang-Il Kim

Optical Materials· Volume 168
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Abstract

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OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

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References (58)

Show source-provided references
1. Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices10.1002/adma.202006230 ↗
2. Metal oxides for optoelectronic applications10.1038/nmat4599 ↗
3. Enhancing the photoelectric performance of photodetectors based on metal oxide semiconductors by charge‐carrier engineering10.1002/adfm.201807672 ↗
4. Metal oxide semiconductor gas sensors in clinical diagnosis and environmental monitoring10.1016/j.sna.2022.114044 ↗
5. Road map of semiconductor metal-oxide-based sensors: a review10.3390/s23156849 ↗
6. Semiconductor gas sensors: materials, technology, design, and application10.3390/s20226694 ↗
7. Metal oxide semiconductors with highly concentrated oxygen vacancies for gas sensing materials: a review10.1016/j.sna.2020.112026 ↗
8. Enhanced performance of gallium‐based wide bandgap oxide semiconductor heterojunction photodetector for solar‐blind optical communication via oxygen vacancy electrical activity modulation10.1002/adom.202302294 ↗
9. Tunable physical properties of Al-doped ZnO thin films by O2 and Ar plasma treatments10.1088/2053-1591/ac3f0a ↗
10. Defect-mediated electron–hole separation in semiconductor photocatalysis10.1039/C8QI00122G ↗
11. Fabrication of BiOIO3 with induced oxygen vacancies for efficient separation of the electron-hole pairs10.1016/j.apcatb.2017.06.041 ↗
12. Achieving high responsivity of photoelectrochemical solar‐blind ultraviolet photodetectors via oxygen vacancy engineering10.1002/adom.202202341 ↗
13. Minimizing non-radiative recombination losses in perovskite solar cells10.1038/s41578-019-0151-y ↗
14. Band gap engineering in ZnO based nanocomposites10.1016/j.physe.2020.113969 ↗
15. Potentials of Costus woodsonii leaf extract in producing narrow band gap ZnO nanoparticles10.1016/j.mssp.2018.11.030 ↗
16. Recent advances in ZnO materials and devices10.1016/S0921-5107(00)00604-8 ↗
17. Catalytic growth of zinc oxide nanowires by vapor transport10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H ↗
18. Optically pumped lasing of ZnO at room temperature10.1063/1.118824 ↗
19. ZnO metal–semiconductor–metal ultraviolet sensors with various contact electrodes10.1016/j.jcrysgro.2006.03.059 ↗
20. Defect-trapped electrons and ferromagnetic exchange in ZnO10.1103/PhysRevB.84.054441 ↗
21. Defect engineering of ZnO: review on oxygen and zinc vacancies10.1016/j.jeurceramsoc.2021.03.031 ↗
22. Effect of thermal annealing on the properties of ZnO thin films10.1016/j.vacuum.2020.109776 ↗
23. Tuning the photocatalytic activity of ZnO nanoparticles by the annihilation of intrinsic defects provoked by the thermal annealing10.1007/s11051-022-05421-7 ↗
24. Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures10.1016/j.chemphys.2016.12.002 ↗
25. Oxygen vacancy-passivated ZnO thin film formed by atomic layer deposition using H2O210.1116/1.5012022 ↗
26. Solution‐Processed metal oxide thin‐film Transistor at low Temperature via A combination Strategy of H2O2‐inducement Technique and infrared irradiation annealing
27. Atomic layer deposition of HfO2 thin films using H2O2 as oxidant10.1016/j.apsusc.2014.02.098 ↗
28. Surface plasma treatment reduces oxygen vacancies defects states to control photogenerated carriers transportation for enhanced self-powered deep UV photoelectric characteristics10.1016/j.apsusc.2022.154459 ↗
29. Reducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties10.1016/j.apsusc.2023.158271 ↗
30. Effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films: identification of hydrogen donors in ZnO10.1021/am100298p ↗
31. Performance Enhancement of Ga2O3 solar-blind UV Photodetector by the Combination of oxygen Annealing and plasma treatment10.1021/acs.jpcc.2c07141 ↗
32. Ultralow dark current and high specific detectivity of Ga2O3-based solar-blind photodetector arrays realized via post-annealing in oxygen plasma10.1039/D4TC02859G ↗
33. Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors10.1016/j.apsusc.2024.161146 ↗
34. Grain boundary carrier scattering in ZnO thin films: a study by temperature-dependent charge carrier transport measurements10.1007/s11664-012-1907-y ↗
35. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films10.1016/j.mseb.2015.04.011 ↗
36. Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films10.1016/j.jallcom.2009.04.139 ↗
37. Endurance improvement due to rapid thermal annealing (RTA) of a TaOx thin film in an oxygen ambient10.3938/jkps.66.721 ↗
38. Short‐duration rapid‐thermal‐annealing processing of tantalum oxide thin films10.1111/j.1151-2916.1999.tb01807.x ↗
39. Defect dominated charge transport in amorphous Ta2O5 thin films10.1063/1.373747 ↗
40. Investigations on the role of alkali to obtain modulated defect concentrations for Cu2O thin films10.1016/j.apsusc.2013.10.183 ↗
41. The study for solution-processed alkali metal-doped indium–zinc oxide thin-film transistors10.1109/LED.2015.2501290 ↗
42. Direct observation of surface dangling bonds during plasma process: chemical reactions during H2 and Ar plasma treatments10.1016/S0040-6090(02)00028-7 ↗
43. Time dependent rise and decay of photocurrent in zinc oxide nanoparticles in ambient and vacuum medium
44. Synthesis and photoluminescence of Cl-doped ZnO nanospheres10.1016/j.optmat.2007.12.013 ↗
45. Effects of impurity band in heavily doped ZnO: HCl10.1016/j.physb.2018.10.031 ↗
46. First-principles study of fluorine-doped zinc oxide10.1063/1.3492444 ↗
47. High-mobility sputtered F-doped ZnO films as good-performance transparent-electrode layers10.1016/j.jsamd.2021.05.004 ↗
48. Room temperature chlorine gas sensing using surface modified ZnO thick film resistors10.1016/j.snb.2006.09.060 ↗
49. XPS analysis of ZnO thin films obtained by pulsed laser deposition
50. X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition10.1016/S0022-0248(02)02481-8 ↗
51. Preparation of flower-like ZnO photocatalyst with oxygen vacancy to enhance the photocatalytic degradation of methyl orange10.1016/j.apsusc.2022.156240 ↗
52. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process10.1016/j.apsusc.2017.02.007 ↗
53. Enhanced sensitivity of low-cost fabricated fluorine doped ZnO metal semiconductor metal photodetector10.1016/j.optmat.2021.111771 ↗
54. Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method10.1016/j.jmat.2023.02.002 ↗
55. The influence of vacuum and annealing on the visible luminescence in ZnO nanoparticles10.1016/j.jlumin.2017.01.022 ↗
56. Transition metal oxide work functions: the influence of cation oxidation state and oxygen vacancies10.1002/adfm.201200615 ↗
57. Effect of atomic layer deposition temperature on the growth orientation, morphology, and electrical, optical, and band-structural properties of ZnO and fluorine-doped ZnO thin films10.1021/acs.jpcc.7b08943 ↗
58. A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode10.1039/C3TC31478B ↗