journal article·2025-05

Novel staggered quantum well design and in-surfactant GaN buffer layer in UVA light emitting diode heterostructures

Nor Syafiqah Azmi, Muhammad Shahrul Nizam Suri, Noratiqah Yusop, Mohd Ann Amirul Zulffiqal Md Sahar, Mohd Anas Ahmad, Muhamad Ikram Md Taib, Mohd Nazri Abd Rahman, Muhammad Iznul Hisyam, Tan Swee Tiam, Ahmad Fakhrurrazi Ahmad Noorden, Mohammad Amirul Hairol Aman, Norzaini Zainal

Optical Materials· Volume 162
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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor Quantum Structures and Devices

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