journal article·2025-05

Temperature dependence of optical property and crystal quality in InGaAs/AlGaAs MQWs grown by MBE

Bo Li, Shufang Ma, Zhi Yang, Jiahui Wang, Ruisi Cheng, Simin Liu, Lin Shang, Hailang Dong, Bocang Qiu

Optical Materials· Volume 162
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Advanced Semiconductor Detectors and Materials

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References (46)

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1. X.H. Yu, C.C. Chai, Y. Liu, Y.T. Yang, X.W. Xi, Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor, Chin. Phys. B. 24 (2015) 045802, doi:10.1088/1674-1056/24/4/048502.10.1088/1674-1056/24/4/048502 ↗
2. Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature10.35848/1882-0786/ad2907 ↗
3. The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures10.1016/j.jlumin.2017.06.054 ↗
4. Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling10.1038/s41377-020-00342-3 ↗
5. Inhomogeneous broadening in quantum dots with ternary aluminum alloys10.1063/1.1410333 ↗
6. A versatile photodetector assisted by photovoltaic and bolometric effects10.1038/s41377-020-00396-3 ↗
7. V.Y. Aleshkin, N.V. Baidus, A.A. Dubinov, A.G. Fefelov, Z.F. Krasilnik, K.E. Kudryavtsev, S.M. Nekorkin, A.V. Novikov, D.A. Pavlov, I.V. Samartsev, E. V. Skorokhodov, M.V. Shaleev, A.A. Sushkov, A.N. Yablonskiy, P.A. Yunin, D.V. Yurasov, Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate, Appl. Phys. Lett. 109 (2016) 061111, doi:10.1063/1.4961059.10.1063/1.4961059 ↗
8. H. Wang, L. Zhong, J. Hou, S. Liu, X. Ma, 1.06 μm high-power InGaAs/GaAsP quantum well lasers, J. Semicond. 38 (2017) 114005, doi:10.1088/1674-4926/38/11/114005.10.1088/1674-4926/38/11/114005 ↗
9. Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy10.1063/1.106565 ↗
10. MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers10.1016/j.jcrysgro.2017.02.031 ↗
11. MOCVD growth and thermal stability analysis of 1.2 μm InGaAs/GaAs multi quantum well structure10.1016/j.jallcom.2022.166173 ↗
12. High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic (IMM) solar cells based on electroplating process10.1016/j.jcrysgro.2019.02.057 ↗
13. Determination of in concentration in InGaAs/GaAs 0 0 1 epilayers in the early stage of anisotropic stress relaxation10.1016/j.jallcom.2005.02.050 ↗
14. Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping
15. Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells10.1016/j.jlumin.2022.119354 ↗
16. The influence mechanism of quantum well growth and annealing temperature on in migration and stress modulation behavior10.3390/nano14080703 ↗
17. Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells10.1016/j.mssp.2022.107197 ↗
18. Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties10.1039/C5RA12905B ↗
19. Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures10.1007/s10854-017-7717-5 ↗
20. X. Wang, J. Yang, D. Zhao, D. Jiang, Z. Liu, W. Liu, F. Liang, S. Liu, Y. Xing, W. Wang, Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells, Mater. Res. Express 5 (2018) 025906, doi:10.1088/2053-1591/aaaef2.10.1088/2053-1591/aaaef2 ↗
21. Effect of GaAs insertion layer on the properties improvement of InGaAs/AlGaAs multiple quantum wells grown by metal-organic chemical vapor deposition10.1016/j.jallcom.2021.159470 ↗
22. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection10.1186/1556-276X-8-310 ↗
23. Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1-xAs/GaAs1-yPy superlattice on vicinal substrates10.1016/j.jcrysgro.2014.10.043 ↗
24. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy10.1016/j.matchemphys.2010.08.046 ↗
25. L. Han, M. Zhao, X. Tang, W. Huo, Z. Deng, Y. Jiang, W. Wang, H. Chen, C. Du, H. Jia, Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p-n junction engineering, J. Appl. Phys. 127 (2020) 085706, doi:10.1063/1.5136300.10.1063/1.5136300 ↗
26. H. Yang, Y. Zheng, Z. Tang, N. Li, X. Zhou, P. Chen, J. Wang, MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors, J. Phys. D: Appl. Phys. 53 (2020) 135110, doi:10.1088/1361-6463/ab66d7.10.1088/1361-6463/ab66d7 ↗
27. The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods10.1016/j.jcrysgro.2009.07.032 ↗
28. The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods10.1016/j.jcrysgro.2008.02.018 ↗
29. Interfaces in GaAs/AlAs quantum well structures10.1063/1.103807 ↗
30. Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs (001)10.1016/0039-6028(95)00540-4 ↗
31. Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution x‐ray diffractions and dynamical simulations10.1063/1.354038 ↗
32. J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, H. Yang, Y. T. Zhang, G. T. Du,Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness, J. Appl. Phys. 117 (2015) 055709, doi:10.1063/1.4907670.10.1063/1.4907670 ↗
33. Heteroepitaxial growth of GaSb interfacial misfit array on GaAs substrate by molecular beam epitaxy10.1016/j.jcrysgro.2023.127260 ↗
34. Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure10.1016/j.jallcom.2017.07.215 ↗
35. The crystallographic properties of strained silicon measured by X-ray diffraction10.1007/s10854-006-5627-z ↗
36. Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si (0 0 1)10.1016/j.apsusc.2005.12.104 ↗
37. Impact of an InxGa1–xAs capping layer in impeding indium desorption from vertically coupled InAs/GaAs quantum dot interfaces10.1021/acsanm.8b01170 ↗
38. Y. Wang, X. Sheng, Q. Guo, X. Li, S. Wang, G. Fu, Y. I. Mazur, Y. Maidaniuk, M. E. Ware, G. J. Salamo, B. Liang, D. L. Huffaker, Photoluminescence study of the interface fluctuation effect for InGaAs/InAlAs/InP single quantum well with different thickness, Nanoscale Res. Lett. 12 (2017) 229, doi:10.1186/s11671-017-1998-8.10.1186/s11671-017-1998-8 ↗
39. Carrier localization in In0.21Ga0.79As/GaAs multiple quantum wells: a modified Pässler model for the S-shaped temperature dependence of photoluminescence energy10.1016/j.spmi.2016.12.051 ↗
40. Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode10.1039/C5CP07805A ↗
41. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells10.1039/C5NR07938A ↗
42. LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs single quantum well10.1016/j.optmat.2016.10.010 ↗
43. Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD10.1016/j.optmat.2016.08.029 ↗
44. Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers10.1088/1742-6596/2086/1/012081 ↗
45. H. He, Q. Yu, H. Li, J. Li, J. Si, Y. Jin, N. Wang, J. Wang, J. He, X. Wang, Y. Zhang, Z. Ye, Exciton localization in solution-processed organolead trihalide perovskites, Nat. Commun. 7 (2016) 10896, doi:10.1038/ncomms10896.10.1038/ncomms10896 ↗
46. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors10.1103/PhysRevB.45.8989 ↗