journal article·2025-07

Optimization of oxygen flow rate toward high-quality ε-Ga2O3 thin films grown on sapphire substrates and solar-blind ultraviolet photodetectors

Mengfan Xu, Yang Li, Chenglong Li, Yiyuan Liu, Guangqing Li, Jiahui Xie, Wenxiang Mu, Zhitai Jia

Optical Materials· Volume 164
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (50)

Show source-provided references
1. β-Ga2O3 nanoribbon with ultra-high solar-blind ultraviolet polarization ratio10.1002/adma.202406559 ↗
2. High-Performance Ga2O3 solar-blind photodetector based on thermal oxidized Ga buffer-layer10.1021/acsami.4c15345 ↗
3. Influence of different crystals on the properties of gallium oxide materials and solar blind UV photoelectric detection10.1016/j.optmat.2025.116733 ↗
4. Self-powered photodetector with low dark current based on the InSe/β-Ga2O3 heterojunctions10.1039/D4TC02790F ↗
5. Excellent wavelength selectivity of p-AlGaN/n-Ga2O3 solar-blind UVC PD10.1021/acsami.4c12680 ↗
6. Corona discharge assisted growth morphology switching of tin-doped gallium oxide for optical gas sensing applications10.1021/acs.cgd.9b00678 ↗
7. Advancements in Ga2O3-based heterojunction ultraviolet photodetectors: types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency10.1016/j.jallcom.2024.177757 ↗
8. Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application10.1016/j.apsusc.2018.12.045 ↗
9. A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes
10. Recent progress on the electronic structure, defect, and doping properties of Ga2O310.1063/1.5142999 ↗
11. Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction10.1063/1.4818620 ↗
12. An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics10.1038/s41467-023-40194-0 ↗
13. β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector10.1016/j.optmat.2015.11.023 ↗
14. Wafer-scale mesoporous GaN distributed bragg reflectors with enhanced luminescence for Eu doped β-Ga2O3 thin films10.1016/j.ceramint.2024.07.467 ↗
15. Ultrahigh-performance solar-blind photodetectors based on high quality heteroepitaxial single crystalline β-Ga2O3 film grown by vacuumfree, low-cost mist chemical vapor deposition10.1002/admt.202001296 ↗
16. Mist CVD technology for gallium oxide deposition: a review10.1016/j.mtphys.2024.101604 ↗
17. Crystal structure and ferroelectric properties of ε-Ga2O3 films grown on (0001)-Sapphire10.1021/acs.inorgchem.6b02244 ↗
18. Electrical and recombination properties of polar orthorhombic κ-Ga2O3 films prepared by halide vapor phase epitaxy10.3390/nano13071214 ↗
19. Density functional theory study of polarization-induced electron confinement by dilute boron alloying in ε-Ga2O3 nanometer-thick film for high electron mobility transistor10.1021/acsanm.4c00717 ↗
20. Piezotronic effect modulated heterojunction electron gas in AlGaN/AlN/GaN heterostructure microwire10.1002/adma.201601721 ↗
21. ε-Ga2O3: an emerging wide bandgap piezoelectric semiconductor for application in radio frequency resonators10.1002/advs.202203927 ↗
22. Structures and energetics of Ga2O3 polymorphs10.1088/0953-8984/19/34/346211 ↗
23. The real structure of ε-Ga2O3 and its relation to κ-phase10.1039/C7CE00123A ↗
24. Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD10.1016/j.jcrysgro.2016.03.013 ↗
25. Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
26. High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure10.1039/C9CE01532A ↗
27. Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method10.1016/j.fmre.2023.01.001 ↗
28. Two-dimensional hole gas formation at the κ-Ga2O3/AlN heterojunction interface10.1016/j.jallcom.2022.168315 ↗
29. HVPE growth and characterization of ε-Ga2O3 films on various substrates10.1149/2162-8777/ab8b4c ↗
30. Electrical conductive corundum-structured α-Ga2O3 thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition10.1143/JJAP.51.070203 ↗
31. ε-Ga2O3 thin films grown by metal-organic chemical vapor deposition and its application as solar-blind photodetectors10.1016/j.jallcom.2022.166632 ↗
32. Metal–semiconductor–metal ε-Ga2O3 solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism10.1021/acsphotonics.9b01727 ↗
33. High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes10.1016/j.mtphys.2023.101034 ↗
34. Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition10.1016/j.jallcom.2021.160799 ↗
35. Growth dynamics dependence of high quality β-Ga2O3 thin films prepared by low pressure chemical vapor deposition10.1016/j.vacuum.2024.113973 ↗
36. Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching
37. Sn-Induced phase stabilization and enhanced thermal stability of κ-Ga2O3 grown by mist chemical vapor deposition10.1021/acsomega.1c05130 ↗
38. The photoluminescence properties of β-Ga2O3 thin films10.1007/s11664-020-08134-6 ↗
39. Size- and phase-controlled nanometer-thick β-Ga2O3 films with green photoluminescence for optoelectronic applications10.1021/acsanm.1c00378 ↗
40. Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence10.1038/s41598-018-36676-7 ↗
41. Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition10.1016/j.apsusc.2019.02.069 ↗
42. Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films10.1039/D1TC00616A ↗
43. Fabrication and characterization of Mg-doped ε-Ga2O3 solar-blind photodetector10.1016/j.vacuum.2020.109425 ↗
44. High-performance solar-blind ultraviolet photodetectors based on β-Ga2O3 thin films grown on p-Si(111) substrates with improved material quality via an AlN buffer layer introduced by metal–organic chemical vapor deposition10.1021/acsami.3c07876 ↗
45. Flexible and Self‐Powered Photoelectrochemical‐Type Solar‐Blind Photodetectors Based on Ag Nanowires‐Embedded Amorphous Ga2O3 Films10.1002/adom.202400116 ↗
46. Ultrasensitive self-powered flexible crystalline β-Ga2O3-Based photodetector obtained through lattice symmetry and band alignment engineering10.1021/acsami.4c05643 ↗
47. Tin-assisted growth of ε-Ga2O3 film and the fabrication of photodetectors on sapphire substrate by PLD10.1364/OME.8.003506 ↗
48. Ultrasensitive, superhigh signal-to-noise ratio, self-powered solar-blind photodetector based on n-Ga2O3/p-CuSCN core–shell microwire heterojunction10.1021/acsami.9b11012 ↗
49. A high-performance ε-Ga2O3-Based deep-ultraviolet photodetector array for solar-blind imaging10.3390/ma16010295 ↗
50. Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments10.1016/j.mtphys.2024.101463 ↗