Influence of high-k La2O3 interfacial oxide layer on the performance of GaN based Schottky barrier ultraviolet-B and A photodetection sensors
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
Show source-provided references
1. New concept ultraviolet photodetectors, Mater
2. Fast- response self-powered solar-blind photodetector based on Pt/β-Ga2O3 Schottky barrier diodes10.1016/j.ijleo.2021.167715 ↗
3. Graphene photodetectors for high-speed optical communications10.1038/nphoton.2010.40 ↗
4. Design and optimization of tunneling photodetectors based on graphene/Al2O3/silicon heterostructures10.1515/nanoph-2019-0499 ↗
5. Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors10.1039/C9NA00130A ↗
6. Highly performing MSM type Ag/n-titanium dioxide nanotubes/p-Si heterojunction based ultraviolet-A photodetectors10.1007/s12633-024-02877-1 ↗
7. CVD graphene/SiC UV photodetector with enhanced spectral responsivity and response speed10.1016/j.sna.2023.114309 ↗
8. Nitride-based metal- insulator-semiconductor ultraviolet sensors with a sputtered lanthanum oxide (La2O3) insulator10.1016/j.surfcoat.2012.07.030 ↗
9. Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN
10. High-performance GaN p-n junction photodetectors for solar ultraviolet applications10.1088/0268-1242/13/9/013 ↗
11. Anisotropy in detectivity of GaN Schottky ultraviolet detectors: comparing lateral and vertical geometry10.1063/1.1433910 ↗
12. High responsivity of GaN photodiode by using low-temperature interlayer10.1063/1.2800813 ↗
13. GaN ultraviolet photosensors capped by low-temperature aluminium nitride layer10.1063/1.2757606 ↗
14. Electrical conduction mechanisms of metal/La2O3/Si structure10.1063/1.1896435 ↗
15. O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates10.1063/1.3499258 ↗
16. Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN10.1063/1.3541883 ↗
17. Structural, chemical and electrical properties of Au/La2O3/n-GaN MIS junction with a high-k lanthanum oxide insulating layer10.1007/s11664-019-07193-8 ↗
18. Realization of CO2 gas sensors and broadband photodetectors using metal/high-k CeO2/p-Si heterojunction10.1016/j.ceramint.2024.05.482 ↗
19. Atomic force microscopy as a tool for atom manipulation10.1038/nnano.2009.347 ↗
20. Impact of annealing temperature on spin coated V2O5 thin films as interfacial layer in Cu/V2O5/n-Si structured Schottky barrier diodes10.1007/s10904-019-01117-z ↗
21. Improved NIR emission from Tb3+, Yb3+ and Nd3+ co-doped La2O3 nano-phosphor10.1007/s42452-020-2185-6 ↗
22. Easy hydrothermal synthesis of multi-shelled La2O3 hollow spheres for lithium-ion batteries10.1007/s10854-017-8025-9 ↗
23. Investigation of the effect of annealing temperature on optical properties of lanthanum- oxide thin films prepared by sol-gel method10.1016/j.surfcoat.2018.07.001 ↗
24. Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application10.1149/1.1581278 ↗
25. Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon10.1103/PhysRevB.41.9819 ↗
26. Investigation of significantly high barrier height in Cu/GaN Schottky diode10.1063/1.4939936 ↗
27. Copper gate AlGaN/GaN HEMT with low gate leakage current, IEEE Electron10.1109/LED.2003.815158 ↗
28. Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN10.1016/j.mee.2007.08.006 ↗
29. Statistical analysis of current– voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods10.1007/s00339-020-04173-2 ↗
30. Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode10.1007/s10854-021-06124-w ↗
31. The response of high barrier Schottky diodes to light illumination10.1007/s10854-020-05186-6 ↗
32. Extraction of Schottky diode parameters from forward current‐voltage characteristics10.1063/1.97359 ↗
33. Gigantic enhancement in response and reset time of ZnO UV nano sensor by utilizing Schottky contact and surface functionalization10.1063/1.3133358 ↗
34. Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors10.1063/1.3696025 ↗
35. Enhanced self-driven ultraviolet photodetection performance of high-k Ta2O5/GaN heterostructure
36. High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors10.1016/j.solmat.2021.111033 ↗
37. GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact10.1063/1.1524035 ↗
38. Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors10.1016/j.cap.2014.10.001 ↗
39. GaN ultraviolet Schottky barrier photodetectors with ZrO2 or SiO2 insulators10.1007/s10043-011-0003-5 ↗
40. Enhanced UV detection by non-polar epitaxial GaN films10.1063/1.4937742 ↗
41. Hybrid graphene/GaN ultraviolet photo- transistors with high responsivity and speed10.1364/OE.26.005408 ↗
42. High performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction10.1063/1.4893591 ↗
43. UV-to- NIR broadband photodetecting sensors using n-TiO2 nanorods/p-Si heterojunction in lateral and vertical configurations10.1007/s00339-023-06649-3 ↗
44. Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer10.1109/LPT.2008.926021 ↗
45. GaN-based p-i-n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates
46. Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector10.1016/j.mssp.2020.105190 ↗
47. High- detectivity ultraviolet photodetectors based on laterally mesoporous GaN10.1039/C7NR01290J ↗
48. Flake-like ZnO nanostructures density for improved absorption using electrochemical deposition in UV detection10.1016/j.jallcom.2013.06.010 ↗
49. Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors10.1021/acsomega.7b02024 ↗
50. Topological Bi2Se3/n-GaN hybrid structure for enhanced and self-powered UV photodetectors10.1021/acsaelm.3c00714 ↗