Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE
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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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References (68)
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1. A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap10.3390/mi14040764 ↗
2. Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate10.1063/5.0147048 ↗
3. High-pure AlN crystalline thin films deposited on GaN at low temperature by plasma-enhanced ALD10.1016/j.vacuum.2023.112114 ↗
4. AlN/GaN HEMTs with fmax exceeding 300 GHz by using Ge-doped n++GaN ohmic contacts10.1021/acsaelm.3c00555 ↗
5. Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy10.1016/j.tsf.2011.03.054 ↗
6. A high thermal stability ohmic contact for GaN-based devices10.1039/D3NA00491K ↗
7. Ohmic contacts to gallium nitride materials10.1016/j.apsusc.2016.04.016 ↗
8. Recent Research on ohmic contacts on GaN-based materials10.1088/1757-899X/738/1/012007 ↗
9. Growth and applications of group III-nitrides10.1088/0022-3727/31/20/001 ↗
10. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370 GHz10.1109/LED.2012.2196751 ↗
11. Kevin) low-resistance ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy10.1063/1.2234566 ↗
12. Kevin) nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single-crystal N+-GaN using plasma assisted molecular beam epitaxy10.1002/pssa.201026557 ↗
13. Metal‐face inAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy10.1002/pssa.201001177 ↗
14. Song · 2016 · vol. 37 · 16
15. Surface oxidation of GaN(0001): nitrogen plasma-assisted cleaning for ultrahigh vacuum applications10.1116/1.4886956 ↗
16. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates10.1016/j.jcrysgro.2016.08.047 ↗
17. On the specific features of the plasma-assisted MBE synthesis of N+-GaN layers on GaN/c-Al2O3 templates10.1134/S1063782619090112 ↗
18. Surface kinetics of zinc-blende (001) GaN10.1103/PhysRevB.54.4432 ↗
19. Fityk: a general-purpose peak fitting program10.1107/S0021889810030499 ↗
20. Surface morphology of MBE-grown GaN on GaAs(001) as function of the N/Ga-ratio10.1557/S1092578300000867 ↗
21. The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)10.1063/1.1345516 ↗
22. Raman investigation on the surface carrier concentration of single GaN microrod grown by MOCVD10.1016/j.apsusc.2019.05.346 ↗
23. Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces10.1109/JLT.2008.922151 ↗
24. Optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111)10.1016/j.apsusc.2019.01.239 ↗
25. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer10.1557/PROC-572-295 ↗
26. Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors10.3390/mi11050519 ↗
27. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112‾0) sapphire grown by Rf-molecular beam epitaxy10.1039/C5RA10099B ↗
28. Influence of slight misorientations of r -plane sapphire substrates on the growth of nonpolar a -plane GaN layers via HVPE10.1002/pssc.200983514 ↗
29. High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures10.1088/0022-3727/34/10A/308 ↗
30. Morkoç · 2008
31. On the lattice parameters of GaN10.1063/1.2753122 ↗
32. Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties. In; Madelung, O., Rössler, U., Schulz, M., Eds.; Springer-Verlag: Berlin/Heidelberg, 2001; Vol. a, pp. 1–7 ISBN 978-3-540-64070-7.
33. Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate10.1016/j.optmat.2024.115184 ↗
34. Anisotropic optical phonons in MOCVD grown Si-doped GaN/sapphire epilayers10.1016/j.mseb.2020.114615 ↗
35. Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of in x Ga 1-x N/Si(111) heterostructures with nanocolumn morphology of thin film10.1016/j.physe.2018.07.024 ↗
36. Structure and optical properties of heterostructures based on MOCVD (AlxGa1−xAs1−yPy)1−zSiz alloys10.1134/S1063782614010217 ↗
37. Structural and optical investigations of AlxGa1−xAs:Si/GaAs(1 0 0) MOCVD heterostructures10.1016/j.physb.2010.07.026 ↗
38. Raman analysis of E2 (high) and A1 (LO) phonon to the stress-free GaN grown on sputtered AlN/graphene buffer layer10.3390/app10248814 ↗
39. Phonon dispersion and Raman scattering in hexagonal GaN and AlN10.1103/PhysRevB.58.12899 ↗
40. Characterization of sapphire (α-Al2O3) thin film fabricated by pulsed laser deposition
41. Effect of plasma oxygen content on the size and content of silicon nanoclusters in amorphous SiOx films obtained with plasma-enhanced chemical vapor deposition10.3390/sym15091800 ↗
42. Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)10.3762/bjnano.8.137 ↗
43. Rapid approximation to the voigt/faddeeva function and its derivatives10.1016/S0022-4073(97)00231-8 ↗
44. Efficient stress-relaxation in inGaN/GaN light-emitting diodes using carbon nanotubes10.1039/C5NR04239A ↗
45. Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)10.1063/1.1502921 ↗
46. Effects of heavy Si doping on the structural and optical properties of N-GaN/AlN/Si(111) heterostructures10.1088/2053-1591/ac7512 ↗
47. Free carrier plasma edge and plasmonic excitations in heavily doped surface grated N-type Si10.1016/j.tsf.2023.139751 ↗
48. Change of the electron effective mass in extremely heavily doped N-type Si obtained by ion implantation and laser annealing10.1016/0038-1098(81)90144-7 ↗
49. Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures10.1016/j.physb.2017.11.028 ↗
50. Optical properties of semiconductors in the visible and ultra-violet ranges
51. Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure10.1063/1.370696 ↗
52. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties10.1038/s41598-019-52067-y ↗
53. Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy10.1016/j.ssc.2005.04.041 ↗
54. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures10.1016/j.apsusc.2020.145267 ↗
55. Broadband measurements of the refractive indices of bulk gallium nitride10.1364/OME.4.001287 ↗
56. Ultrathin nano-sized Al2O3 strips on the surface of por-Si10.1016/j.mssp.2015.05.067 ↗
57. Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates10.1016/j.physb.2016.04.044 ↗
58. Characterization of undoped and Si‐doped bulk GaN fabricated by hydride vapor phase epitaxy10.1002/pssc.201300678 ↗
59. In situ asymmetric island sidewall growth of high-quality semipolar (112‾2) GaN on m-plane sapphire10.1039/C6CE00878J ↗
60. Donor-hydrogen bound exciton in epitaxial GaN10.1103/PhysRevB.60.15980 ↗
61. Free excitons in GaN10.1557/S1092578300001745 ↗
62. Comparison of GaN nanowires grown on C-, r- and m-plane sapphire substrates10.1016/j.jcrysgro.2015.12.044 ↗
63. Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy10.1016/S0921-5107(97)00193-1 ↗
64. Recombination of free and bound excitons in GaN10.1002/pssb.200844059 ↗
65. AlGaN-InGaN-GaN near ultraviolet light emitting diode
66. Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs
67. Investigation of alloyed ohmic contacts in epitaxial tellurium-doped gallium arsenide layers10.1134/S1063739718060045 ↗
68. Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films10.1088/1674-1056/accb8a ↗