Interface band alignment of amorphous Ga2O3/Ge heterojunctions fabricated by atomic layer deposition
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OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
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References (46)
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1. Self-powered solar-blind deep-UV photodetector based on CuI/Ga2O3 heterojunction with high sensitivity10.1016/j.sna.2022.114068 ↗
2. Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere10.1007/s10854-011-0433-7 ↗
3. Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy10.1007/s10853-015-9693-6 ↗
4. Interfacial Engineering of SnS/Ga2O Heterojunction by SnO for a High‐Performance Self‐Powered Solar‐Blind UV Photodetector - Wu - 2022 - Advanced Materials Interfaces - Wiley Online Library, (n.d.). https://onlinelibrary.wiley.com/doi/full/10.1002/admi.202200851 (accessed December 28, 2022).
5. Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction10.1016/j.matlet.2019.127074 ↗
6. Study on β-Ga2O3 films grown with various VI/III ratios by MOCVD10.3390/coatings9050281 ↗
7. Hexagonal phase-pure wide band gap ε-Ga 2 O 3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition10.1063/1.4950867 ↗
8. Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film10.1007/s10854-016-5835-0 ↗
9. Zigzag GaN∕Ga2O3 heterogeneous nanowires: synthesis, optical and gas sensing properties10.1063/1.3624331 ↗
10. Room-temperature ozone sensing capability of IGZO-decorated amorphous Ga2O3 films10.1021/acsami.9b22400 ↗
11. Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition
12. A selective etching route for large-scale fabrication of β-Ga2O3 micro-/nanotube arrays10.3390/nano11123327 ↗
13. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
14. Fabrication and interfacial electronic structure of wide bandgap NiO and Ga2O3 p–n heterojunction10.1021/acsaelm.9b00704 ↗
15. ALD oxygen vacancy-rich amorphous Ga2O3 on three-dimensional urchin-like ZnO arrays for high-performance self-powered solar-blind photodetectors10.1039/D1NR08262K ↗
16. Atomic layer deposition of Ga2O3 on γ-Al2O3 catalysts with higher interactions and improved activity and propylene selectivity in CO2-assisted oxidative dehydrogenation of propane10.1016/j.apcata.2023.119117 ↗
17. Low deposition temperature amorphous ALD-Ga2O3 thin films and decoration with MoS2 multilayers toward flexible solar-blind photodetectors10.1021/acsami.1c11692 ↗
18. Review of Ga2O3-based optoelectronic devices
19. Band alignments at Ga2O3 heterojunction interfaces with Si and Ge10.1063/1.5034459 ↗
20. Germanium surface passivation and atomic layer deposition of high-k dielectrics - a tutorial review on Ge-based MOS capacitors
21. N2-Plasma-Treated Ga2O3(Gd2O3) as interface passivation layer for Ge MOS capacitor with HfTiON gate dielectric10.1109/TED.2016.2565691 ↗
22. First principles investigation of photoelectric properties of Ga 2 O 3 Doped with group IV elements (Si,Ge,Sn)
23. A structural and ellipsometric investigation of thin gallium oxide layers deposited on Si by means of laser deposition10.1134/S0030400X17120153 ↗
24. Ellipsometric determination of anisotropic optical constants of single phase Ga2O3 thin films in its orthorhombic and monoclinic phases10.1016/j.optmat.2020.109807 ↗
25. Investigation of optical characteristics of PbMoO4 single crystals by spectroscopic ellipsometry10.1016/j.ijleo.2022.169356 ↗
26. First-principles study on structural stability and electronic properties of GaAs nanowire undergoing surface oxidization10.1016/j.apsusc.2019.144231 ↗
27. Silicide formation at HfO2–Si and ZrO2–Si interfaces induced by Ar+ ion bombardment10.1116/1.1795823 ↗
28. Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma10.1007/s00339-016-0381-4 ↗
29. Epi-cleaning of Ge/GeSn heterostructures10.1063/1.4906616 ↗
30. Silicide formation at HfO2–Si and ZrO2–Si interfaces induced by Ar+ ion bombardment10.1116/1.1795823 ↗
31. Utilization of sputter depth profiling for the determination of band alignment at polycrystalline CdTe/CdS heterointerfaces10.1063/1.1507830 ↗
32. Analysis on the electronic trap of β-Ga2O3 single crystal10.1007/s10853-019-03777-1 ↗
33. Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites10.1039/C8SE00265G ↗
34. Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface10.1063/1.5126325 ↗
35. Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films10.1063/1.5054154 ↗
36. (PDF) Germanium surface passivation and atomic layer deposition of high-k dielectrics - A tutorial review on Ge-based MOS capacitors, (n.d.). https://www.researchgate.net/publication/254498320_Germanium_surface_passivation_and_atomic_layer_deposition_of_high-k_dielectrics_-_A_tutorial_review_on_Ge-based_MOS_capacitors (accessed November 22, 2022).
37. Hydrothermal synthesis and photocatalytic property of Sn-doped β-Ga2O3 nanostructure10.1149/2162-8777/ab8b4b ↗
38. Band offset and electrical properties of ErZO/β-Ga2O3 and GZO/β-Ga2O3 heterojunctions10.1016/j.apsusc.2021.151814 ↗
39. Investigation of band alignment for hybrid 2D-MoS2/3D-β- Ga2O3 heterojunctions with nitridation10.1186/s11671-019-3181-x ↗
40. Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy10.1063/1.4767524 ↗
41. GeO2/Ge structure submitted to annealing in deuterium: incorporation pathways and associated oxide modifications10.1063/1.4898062 ↗
42. Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions10.1063/1.4876920 ↗
43. Interfacial charge density and its connection to adhesion and frictional forces10.1103/PhysRevLett.121.026804 ↗
44. The work function of the elements and its periodicity10.1063/1.323539 ↗
45. Fermi level, work function and vacuum level10.1039/C5MH00160A ↗
46. Point defects induced work function modulation of β-Ga2O310.1016/j.apsusc.2018.09.236 ↗