Band alignment engineering of p-Ge/n-Si heterojunction for low cost tandem solar cell applications
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OpenAlex topics: Semiconductor materials and interfaces · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (53)
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1. Advanced biofuels: a path to sustainable energy10.1039/D4SE00536H ↗
2. Renewable energy and energy reductions or solar geoengineering for climate change mitigation?10.3390/en15197315 ↗
3. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions10.1063/1.4945728 ↗
4. Ge-on-Si optoelectronics10.1016/j.tsf.2011.10.121 ↗
5. Substrate-dependent carrier mobility in polycrystalline Ge thin films
6. Temperature dependent aluminum induced crystallization of amorphous germanium thin films10.1016/j.cplett.2023.140848 ↗
7. Optoelectronic and structural properties of Ge-rich narrow band gap nc-SixGe1-x absorber layer for tandem structure nc-Si solar cells10.1016/j.jpcs.2021.110055 ↗
8. Characterization and design of photovoltaic solar cells that absorb ultraviolet, visible and infrared light10.3390/nano11010078 ↗
9. Towards the 10‐year milestone of monolithic perovskite/silicon tandem solar cells
10. Monolithic perovskite/silicon tandem solar cells: a review of the present status and solutions toward commercial application10.1016/j.nanoen.2024.109476 ↗
11. A review on single crystal and thin film Si–Ge alloy: growth and applications10.1039/D2MA00104G ↗
12. Investigation of crystallized germanium thin films and germanium/silicon heterojunction devices for optoelectronic applications10.1016/j.mssp.2014.10.041 ↗
13. Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass10.1063/1.5093952 ↗
14. Vertical nanowire heterojunction devices based on a clean Si/Ge interface10.1021/nl403112a ↗
15. High-performance Ge-on-Si photodetectors10.1038/nphoton.2010.157 ↗
16. Strain engineering of silicon–germanium (SiGe) virtual substrates
17. Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications10.1016/j.apsusc.2009.03.035 ↗
18. Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications10.1016/j.mssp.2016.09.023 ↗
19. Band discontinuities of Si/Ge heterostructures10.1016/0038-1101(94)90007-8 ↗
20. Improved rectification and transport properties of hybrid PEDOT: PSS/Ge/Si heterojunctions with Ge nanoclusters10.1063/5.0016422 ↗
21. Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells10.1016/j.solmat.2014.11.018 ↗
22. Fabrication technology of SiGe hetero-structures and their properties10.1016/j.surfrep.2005.08.001 ↗
23. Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding10.1364/OE.21.017309 ↗
24. Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs10.3938/jkps.64.98 ↗
25. Two‐dimensional germanium for photocatalysis, Inf. Funct
26. Perspectives on metal induced crystallization of a-Si and a-Ge thin films10.1039/D2RA06096E ↗
27. Germanium: epitaxy and its applications10.1016/j.pcrysgrow.2010.09.002 ↗
28. Recent advances in germanium nanocrystals: synthesis, optical properties and applications10.1016/j.pmatsci.2017.07.005 ↗
29. The effects of low temperature buffer layer on the growth of pure Ge on Si (001)10.1016/j.tsf.2010.03.148 ↗
30. Ge growth on porous silicon: the effect of buffer porosity on the epilayer crystalline quality10.1063/1.4894863 ↗
31. Intermixing and buried interfacial structure in strained Ge/Si (105) facets
32. Influence of GeSi interfacial layer on Ge–Ge optical phonon mode in SiO2 films embedded with Ge nanocrystals
33. Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition10.1016/j.jpcs.2009.07.016 ↗
34. Germanium nanoparticle formation in thin oxide films on Si by negative-ion implantation10.1016/j.surfcoat.2006.02.063 ↗
35. Effect of deposition temperature on the electrical properties of solid-phase crystallized Ge thin films, electron
36. Low-temperature growth of narrow optical gap highly conducting nc-Ge thin films with superior crystallinity involving dominant< 111> orientation10.1016/j.solmat.2024.112967 ↗
37. Kinetic study of GeOx amorphous film disproportionation into a-Ge nanoclusters/GeO2 system using Raman and infrared spectroscopy10.1016/j.jnoncrysol.2024.122929 ↗
38. Study on resistance of crystalline GeTe thin films and enhancement on electrical properties of phase change switch10.1109/TED.2024.3400758 ↗
39. Experimental and theoretical studies on self-diffusion in amorphous germanium10.1063/5.0183578 ↗
40. Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures10.1063/1.3682110 ↗
41. Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films10.1134/S1063782620070040 ↗
42. Strain effects on polycrystalline germanium thin films10.1038/s41598-021-87616-x ↗
43. High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization10.1038/s41598-019-53084-7 ↗
44. Determination of band gap in polycrystalline Si/Ge thin film multilayers10.1557/jmr.2006.0096 ↗
45. Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications10.1016/j.mssp.2016.08.005 ↗
46. Role of annealing temperature on optimizing the linear and nonlinear optical properties of as 40 Se 50 Ge 10 films10.1039/D0RA04763E ↗
47. A fabrication method for type-II Ge clathrate film by annealing of Ge film covered with Na layer10.1016/j.tsf.2021.138859 ↗
48. Thermoelectric properties of Zn2GeO4 nano-crystals grown on ITO and Au coated Si substrates by thermal evaporation10.1016/j.ceramint.2019.06.047 ↗
49. Structural, stability, electronic, optical and thermodynamic properties of hydrogenated germanene using first-principle calculations10.1016/j.mseb.2020.114584 ↗
50. RASTOGI · 2018
51. Fractal germanium patterns: annealing strategies and perspectives of metal-induced crystallization10.1080/10408436.2013.836074 ↗
52. Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films10.1016/j.apsusc.2009.09.043 ↗
53. The electrical properties of n-ZnO/p-SnO heterojunction diodes10.1063/1.4963266 ↗