Improving device performance of sputtered CZTSe based solar cells by Manganese doping
Source abstract
Abstract
Despite many efforts, Cu2ZnSnSe4 (CZTSe) based solar cells have remained relatively low efficiency compared to other thin film-based devices. One of the prevalent strategies used to improve cell performance in CZTSe is cation substitution. In this contribution, the effects of substituting Mn for Zn on CZTSe solar cell performance were systematically examined. Samples with various Mn content were grown by a two-stage method involving high temperature annealing of precursor layers comprising Cu, Zn, Sn, Mn and Se. All of the samples were found to have Cu-poor and (Zn + Mn)-rich or nearly stoichometric compositions. They crystalized in kesterite phase irrespective of the Mn content as confirmed by X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) measurements. The highest efficiency solar cell (5.56%) was obtained employing the 5% Mn doped CZTSe absorber. This film was found to have improved microstructure and reduced defect density. This is the first report on over 5% efficient kesterite thin film solar cell fabricated on a Cu2Mn0.05Zn0.95SnSe4 absorber layer.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
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