journal article·2023-08

60Co γ-irradiation of AlGaN UVC light-emitting diodes

Xinyi Xia, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Simon Barke, Peter J. Wass, Fan Ren, John W. Conklin, S.J. Pearton

Optical Materials· Volume 142
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (49)

Show source-provided references
1. Recent progress in AlGaN deep-UV LEDs10.5772/intechopen.79936 ↗
2. Deep-ultraviolet light-emitting diodes10.1109/TED.2009.2033768 ↗
3. Reliability of commercial UVC LEDs: 2022 state-of-the-art10.3390/electronics11050728 ↗
4. Kowalski · 2009
5. Rapid inactivation of SARS-CoV-2 with deep-UV LED irradiation10.1080/22221751.2020.1796529 ↗
6. The 2020 UV emitter roadmap10.1088/1361-6463/aba64c ↗
7. Han, Jung and Amano, Hiroshi, the emergence and prospects of deep-ultraviolet light-emitting diode technologies10.1038/s41566-019-0359-9 ↗
8. Norihiko, over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer
9. Takano, Takayoshi, Mino, Takuya, Jun Sakai, Jun Noguchi, Norimichi, Tsubaki, Kenji and Hirayama, Hideki, Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency 2017, Appl. Phys. Express 10, 031002.10.7567/APEX.10.031002 ↗
10. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 1010.1143/APEX.5.082101 ↗
11. High-output-power deep ultraviolet light-emitting diode assembly using direct bonding10.7567/APEX.9.072101 ↗
12. Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer
13. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers, 202110.35848/1882-0786/ac154c ↗
14. Surface hole gas enabled transparent deep ultraviolet light-emitting diode
15. A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire10.3390/app8081264 ↗
16. Characterizing and testing deep UV LEDs for use in space applications10.1088/0264-9381/32/23/235020 ↗
17. Test-mass charging simulations for the LISA pathfinder mission10.1088/0264-9381/22/10/023 ↗
18. UV LED operation lifetime and radiation hardness qualification for space flights10.1088/1742-6596/154/1/012028 ↗
19. Ground testing and flight demonstration of charge management of insulated test masses using UV LED electron photoemission10.1088/0264-9381/33/24/245004 ↗
20. Free-fall performance for the LISA gravitational wave observatory: new results from LISA pathfinder
21. Gamma-irradiation-accelerated degradation in AlGaN-based UVC LEDs under electrical stress10.1109/TNS.2020.3046255 ↗
22. Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes10.1063/1.4908543 ↗
23. Modelling of proton irradiated GaN-based high-power white light-emitting diodes10.7567/JJAP.57.080304 ↗
24. Point defects controlling non-radiative recombination in GaN blue light emitting diodes: insights from radiation damage experiments10.1063/1.5000956 ↗
25. Electron irradiation of near-UV GaN/InGaN light emitting diodes10.1002/pssa.201700372 ↗
26. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes10.1063/1.2132085 ↗
27. Influence of 60 Co γ -rays on dc performance of AlGaN/GaN high electron mobility transistors10.1063/1.1445809 ↗
28. Review-ionizing radiation damage effects on GaN devices
29. Deep UV AlGaN LED reliability for long duration space missions10.1116/6.0002199 ↗
30. High volume UV LED performance testing10.1063/5.0107372 ↗
31. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm10.35848/1882-0786/ab65fb ↗
32. Defects and reliability of GaN‐based LEDs: review and perspectives10.1002/pssa.202100727 ↗
33. Reliability of commercial UVC LEDs: 2022 state-of-the-art10.3390/electronics11050728 ↗
34. Defect-related degradation of AlGaN-Based UV-B LEDs10.1109/TED.2016.2631720 ↗
35. Degradation and failure mechanism of AlGaNbased UVC-LEDs10.1016/j.sse.2019.01.004 ↗
36. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation10.1364/PRJ.401785 ↗
37. A renaming proposal, 2019, the Auger–Meitner effect10.1063/PT.3.4281 ↗
38. Damage correlations in semiconductors exposed to gamma, electron and proton radiations10.1109/23.273529 ↗
39. El Allam · J. Appl. Phys. · 2018 · 12310.1063/1.5013211 ↗
40. Fleetwood · IEEE Trans. Nucl. Sci. · 2013 · 60 · 170610.1109/TNS.2013.2259260 ↗
41. Schowalter · 2020
42. High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance
43. Semiconductor near-ultraviolet photoelectronics10.1088/0268-1242/14/7/201 ↗
44. EpiXS: a Windows-based program for photon attenuation, dosimetry and shielding based on EPICS2017 (ENDF/B-VIII) and EPDL97 (ENDF/B-VI.8)10.1016/j.radphyschem.2020.109331 ↗
45. Diode ideality factor in modern light-emitting diodes10.1088/0268-1242/26/7/075011 ↗
46. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes10.1063/1.1593218 ↗
47. Technique to evaluate the diode ideality factor of light-emitting diodes10.1063/1.3318285 ↗
48. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN10.1063/1.5012994 ↗
49. Low energy electron beam induced vacancy activation in GaN10.1063/1.3696047 ↗