Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Ga2O3 and related materials · Luminescence Properties of Advanced Materials · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. 200 nm deep ultraviolet photodetectors based on AlN10.1063/1.2397021 ↗
2. All-silicon photovoltaic detectors with deep ultraviolet selectivity10.1186/s43074-020-00014-w ↗
3. Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures10.1063/5.0059744 ↗
4. Lu2O3: a promising ultrawide bandgap semiconductor for deep UV photodetector10.1063/5.0048752 ↗
5. Graphene-based deep-ultraviolet photodetectors with ultrahigh responsivity using chemical vapor deposition of hexagonal boron nitride to achieve photogating10.1364/OME.457545 ↗
6. Deep-ultraviolet detectors based on oxygen-/fluorine-terminated (100) diamond10.1016/j.spmi.2016.09.030 ↗
7. Direct growth of hexagonal boron nitride thick films on dielectric substrates by ion beam assisted deposition for deep-UV photodetectors
8. Performance improvement of amorphous Ga2O3/P-Si deep ultraviolet photodetector by oxygen plasma treatment10.3390/cryst11101248 ↗
9. Patterned growth of β-Ga2O3 thin films for solar-blind deep-ultraviolet photodetectors array and optical imaging application10.1016/j.jmst.2020.09.015 ↗
10. ε-Ga2O3 thin films grown by metal-organic chemical vapor deposition and its application as solar-blind photodetectors10.1016/j.jallcom.2022.166632 ↗
11. Temperature-dependent self-powered solar-blind photodetector based on Ag(2)O/beta-Ga(2)O(3) heterojunction10.3390/nano12172983 ↗
12. Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates10.1063/5.0146030 ↗
13. High sensitivity Ga2O3 ultraviolet photodetector by one-step thermal oxidation of p-GaN films10.1016/j.mssp.2023.107372 ↗
14. Optical properties of Ni-doped MgGa2O4 single crystals grown by floating zone method10.1016/j.jlumin.2009.07.029 ↗
15. Prediction of structure and cation ordering in an ordered normal-inverse double spinel10.1038/s43246-020-00082-2 ↗
16. Novel transparent MgGa2O4 and Ni2+-doped MgGa2O4 ceramics10.1007/s40145-021-0551-5 ↗
17. MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals10.1002/pssa.201431835 ↗
18. MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors10.1063/5.0077904 ↗
19. Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition10.1016/j.jcrysgro.2013.11.022 ↗
20. Low temperature growth of europium doped Ga2O3 luminescent films10.1016/j.jcrysgro.2015.08.020 ↗
21. Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices
22. Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition10.1016/j.tsf.2017.08.038 ↗
23. Enhanced green emission from Er-doped (AlGa)2O3 films grown by pulsed laser deposition10.35848/1347-4065/ab8d09 ↗
24. Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides
25. Low driven voltage green electroluminescent device based on Er:Ga2O3/GaAs heterojunction10.1016/j.optmat.2021.111078 ↗
26. Strategy toward white LEDs based on vertically integrated rare earth doped Ga2O3 films10.1063/5.0060066 ↗
27. Current-controlled electroluminescence from light-emitting diodes based on Tm, Er, and Eu codoped Ga2O3 thin films
28. Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing10.1016/j.jlumin.2022.118858 ↗
29. A new technique for crystallographic characterization of heteroepitaxial crystal films10.1063/1.339930 ↗
30. Structural properties of InN films grown on sapphire substrates by microwave‐excited metalorganic vapor‐phase epitaxy10.1063/1.355781 ↗