Diffusion of chromium in zinc chalcogenides during hot isostatic pressing
Source abstract
Abstract
Abstract The diffusion of chromium impurities in zinc chalcogenides (ZnS, ZnSe) during hot isostatic pressing (HIP) in the temperature range T = 1000–1330 °C and pressures P = 100–190 MPa has been investigated. The chromium concentration and its distribution over the sample volume with a step from 5 to 50 μm was determined by FTIR spectroscopy in combination with an IR microscope. The diffusion coefficients of Cr in ZnS and ZnSe at various temperatures and pressures were determined. The diffusion coefficients of Cr at 1300 °C were (7.0 ± 0.3) × 10−8 cm2/s in ZnSe and (3.4 ± 0.4) × 10−8 cm2/s in ZnS. It is shown that the temperature dependences are described by the Arrhenius equation, and the isostatic pressure does not affect the value of the diffusion coefficients.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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