Low temperature Fermi-Dirac distribution in InAsP quantum dot lasers
Source abstract
Abstract
Abstract We examine the probability of carriers in a 770 nm InAsP quantum dot (QD) laser by analyzing Fermi-Dirac distribution using the segmented contact method. This study compares the results of InAsP QD materials with the standard 720 nm InP QD laser that was developed by Cardiff University. Both samples were grown under the same conditions on a compatible wafer. InAsP QD showed non-uniformity in the dot size with a higher strain field, as evidenced by transmission electron microscopy images, as well as a deeper dot confinement by approximately 100 meV, as confirmed by Photovoltage Spectroscopy. This study revealed a breakdown of the Fermi-Dirac distribution at 150 K for InAsP QD materials. This could make InAsP a capable applicant for the ultrafast source generation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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