journal article·2022-11

Realizing high injection current density up to 200 kA-cm−2 in electrically pumped AlGaN ultraviolet laser diodes on c-Sapphire substrate

M. Ajmal Khan, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

Optical Materials· Volume 133
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OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Photocathodes and Microchannel Plates

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References (34)

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1. Recent progress toward realizing AlGaN-based deep-UV laser diodesAlGaN深紫外LDの実現へ向けた最近の進展10.2184/lsj.47.4_196 ↗
2. A 271.8 nm deep-ultraviolet laser diode for room temperature operation
3. Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
4. 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications10.1039/C8TC03825B ↗
5. External quantum efficiency of 6.5% at 300 nm emission and 4.7% at 310 nm emission on bare wafer of AlGaN-based UVB LEDs10.1021/acsaelm.0c00172 ↗
6. InGaN-based multi-quantum-well-structure laser diodes10.1143/JJAP.35.L74 ↗
7. Ultraviolet GaN single quantum well laser diodes10.1143/JJAP.40.L785 ↗
8. 365 nm ultraviolet laser diodes composed of quaternary AlInGaN alloy10.1143/JJAP.42.L1318 ↗
9. Ultraviolet AlGaN multiple-quantum-well laser diodes10.1063/1.1585135 ↗
10. 350.9 nm UV laser diode grown on low-dislocation-density AlGaN10.1143/JJAP.43.L499 ↗
11. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode10.1038/nphoton.2008.135 ↗
12. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode10.1063/1.3050539 ↗
13. Ultraviolet AlGaN multiple-quantum-well laser diodes with emission wavelengths below 330 nm,” the 6th international symposium on growth of III–nitrides (ISGN-6), Hamamatsu
14. Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire
15. Kneissl · 2016 · 1
16. Hirayama · 2018 · 13
17. Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED10.1364/OL.395571 ↗
18. High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells10.1063/5.0027697 ↗
19. Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells10.1063/5.0015554 ↗
20. Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells10.35848/1347-4065/ac3025 ↗
21. AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range10.1364/OE.24.025415 ↗
22. Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters10.1088/1361-6528/abbddb ↗
23. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire10.1063/1.2770662 ↗
24. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
25. Optical confinement in laser diodes based on nitrides of Group III elements. Part 2: analysis of heterostructures on various substrates10.1134/S1063782608070166 ↗
26. Casey · 1978 · vol. 1
27. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes10.1063/5.0027789 ↗
28. Optical gain in semiconductors10.1016/0022-2313(73)90072-0 ↗
29. AlGaN-based UV-B laser diode with a high optical confinement factor10.1063/5.0046224 ↗
30. access on Oct 2021: https://www.str-soft.com/.
31. Sizov · J. Appl. Phys. · 2013 · 11310.1063/1.4806997 ↗
32. Kioupakis · APEX · 2010 · 3
33. Ajmal Khan · Jpn. J. Appl. Phys. · 2020 · 59 · SAAD0110.7567/1347-4065/ab460b ↗
34. Ajmal Khan · Sci. Rep. · 2022 · 12 · 259110.1038/s41598-022-04876-x ↗