Analysis of layer splitting in x and z-cut KTiOPO4 implanted by H+ ions
Source abstract
Abstract
Abstract H + ions with various fluences are implanted into x and z-cut KTP crystals to achieve KTP film. Post-implantation annealing under different temperature is imposed on the samples to induce layer splitting and surface morphology modification. Layer exfoliation is observed in freestanding z-cut samples. Layer splitting is obtained using bonding method in x-cut sample implanted with 117 keV H + ions at ion fluence of 6 × 10 16 ions/cm 2 . Optical microscopy, scanning electron microscope and atomic force microscopy are used to observe splitting phenomenon. Rutherford backscattering spectroscopy/channeling method is employed to measure lattice damage and to investigate the relationship between implantation-induced defects and layer splitting.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Photorefractive and Nonlinear Optics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (21)
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